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S1230ABP-70-IND の電気的特性と機能

S1230ABP-70-INDのメーカーはDallas Semiconducotrです、この部品の機能は「256k Nonvolatile SRAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 S1230ABP-70-IND
部品説明 256k Nonvolatile SRAM
メーカ Dallas Semiconducotr
ロゴ Dallas Semiconducotr ロゴ 




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S1230ABP-70-IND Datasheet, S1230ABP-70-IND PDF,ピン配置, 機能
www.dalsemi.com
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Replaces 32k x 8 volatile static RAM,
EEPROM or Flash memory
Unlimited write cycles
Low-power CMOS
Read and write access times as fast as 70 ns
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
Full ±10% VCC operating range (DS1230Y)
Optional ±5% VCC operating range
(DS1230AB)
Optional industrial temperature range of
-40°C to +85°C, designated IND
JEDEC standard 28-pin DIP package
New PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides
lithium backup battery
- Standardized pinout for all nonvolatile
SRAM products
- Detachment feature on PowerCap allows
easy removal using a regular screwdriver
DS1230Y/AB
256k Nonvolatile SRAM
PIN ASSIGNMENT
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 VCC
27 WE
26 A13
25 A8
24 A9
23 A11
22 OE
21 A10
20 CE
19 DQ7
18 DQ6
17
DQ5
16 DQ4
15 DQ3
28-Pin ENCAPSULATED PACKAGE
740-mil EXTENDED
NC
NC
NC
NC
VCC
WE
OE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
1
2
3
4
5
6
7
8
9
10
11
12
13 GND VBAT
14
15
16
17
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
34-Pin POWERCAP MODULE (PCM)
(USES DS9034PC POWERCAP)
NC
NC
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
PIN DESCRIPTION
A0 - A14
- Address Inputs
DQ0 - DQ7
- Data In/Data Out
CE - Chip Enable
WE - Write Enable
OE - Output Enable
VCC
GND
- Power (+5V)
- Ground
NC - No Connect
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S1230ABP-70-IND pdf, ピン配列
DS1230Y/AB
PACKAGES
The DS1230 devices are available in two packages: 28-pin DIP and 34-pin PowerCap Module (PCM).
The 28-pin DIP integrates a lithium battery, an SRAM memory and a nonvolatile control function into a
single package with a JEDEC-standard, 600-mil DIP pinout. The 34-pin PowerCap Module integrates
SRAM memory and nonvolatile control along with contacts for connection to the lithium battery in the
DS9034PC PowerCap. The PowerCap Module package design allows a DS1230 PCM device to be
surface mounted without subjecting its lithium backup battery to destructive high-temperature reflow
soldering. After a DS1230 PCM is reflow soldered, a DS9034PC PowerCap is snapped on top of the
PCM to form a complete Nonvolatile SRAM module. The DS9034PC is keyed to prevent improper
attachment. DS1230 PowerCap Modules and DS9034PC PowerCaps are ordered separately and shipped
in separate containers. See the DS9034PC data sheet for further information.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
-0.3V to +7.0V
0°C to 70°C, -40°C to +85°C for IND parts
-40°C to +70°C, -40°C to +85°C for IND parts
260°C for 10 seconds
* This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL MIN TYP
DS1230AB Power Supply Voltage
VCC 4.75 5.0
DS1230Y Power Supply Voltage
VCC 4.5 5.0
Logic 1
VIH 2.2
Logic 0
VIL 0.0
(tA: See Note 10)
MAX UNITS NOTES
5.25 V
5.5 V
VCC V
0.8 V
DC ELECTRICAL
CHARACTERISTICS
PARAMETER
Input Leakage Current
I/O Leakage Current CE VIH VCC
Output Current @ 2.4V
Output Current @ 0.4V
Standby Current CE =2.2V
Standby Current CE =VCC-0.5V
Operating Current
Write Protection Voltage (DS1230AB)
Write Protection Voltage (DS1230Y)
(VCC=5V ±=5% for DS1230AB)
(tA: See Note 10) (VCC=5V ±=10% for DS1230Y)
SYMBOL MIN TYP MAX UNITS NOTES
IIL -1.0
+1.0 µA
IIO -1.0
+1.0 µA
IOH -1.0
mA
IOL 2.0
mA
ICCS1
5.0 10.0
mA
ICCS2
3.0 5.0
mA
ICCO1
85 mA
VTP 4.50 4.62 4.75
V
VTP 4.25 4.37 4.5
V
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3Pages


S1230ABP-70-IND 電子部品, 半導体
READ CYCLE
SEE NOTE 1
WRITE CYCLE 1
DS1230Y/AB
SEE NOTES 2, 3, 4, 6, 7, 8, and 12
6 of 12

6 Page



ページ 合計 : 12 ページ
 
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共有リンク

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部品番号部品説明メーカ
S1230ABP-70-IND

256k Nonvolatile SRAM

Dallas Semiconducotr
Dallas Semiconducotr


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