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PZTA64 の電気的特性と機能

PZTA64のメーカーはFairchild Semiconductorです、この部品の機能は「PNP Darlington Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 PZTA64
部品説明 PNP Darlington Transistor
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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PZTA64 Datasheet, PZTA64 PDF,ピン配置, 機能
Discrete POWER & Signal
Technologies
MPSA64
MMBTA64
PZTA64
C
BE
TO-92
C
SOT-23
Mark: 2V
E
B
C
SOT-223
C
B
E
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
VCBO
Collector-Emitter Voltage
Collector-Base Voltage
30
30
VEBO
Emitter-Base Voltage
10
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.2
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
MPSA64
*MMBTA64
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
625 350
5.0 2.8
83.3
RθJA Thermal Resistance, Junction to Ambient
200
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**PZTA64
1,000
8.0
125
Units
mW
mW /°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
A64, Rev A

1 Page





PZTA64 pdf, ピン配列
Typical Characteristics (continued)
PNP Darlington Transistor
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
2
β = 1000
1.6 - 40 ºC
1.2 25 °C
125 ºC
0.8
0.4
0
0.001
0.01 0.1
I C - COLLECTOR CURRENT (A)
1
Collector-Cutoff Current
vs. Ambient Temperature
100
V = 15V
CB
10
1
0.1
0.01
25
50 75 100
TA- AMBIENT TEMPERATURE (º C)
125
Base Emitter ON Voltage vs
Collector Current
2
1.6
- 40 ºC
1.2
0.8
25 °C
125 ºC
0.4 VCE = 5V
0
0.001
0.01
0.1
I C - COLLECTOR CURRENT (A)
1
Input and Output Capacitance
vs Reverse Bias Voltage
16
f = 1.0 MHz
12
8
C ib
4
C ob
0
0.1 1 10 100
REVERSE VOLTAGE (V)
Power Dissipation vs
Ambient Temperature
1
0.75 TO-92
SOT-223
0.5
SOT-23
0.25
0
0 25 50 75 100 125 150
TEMPERATURE (oC)


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共有リンク

Link :


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