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PZTA06 の電気的特性と機能

PZTA06のメーカーはNXP Semiconductorsです、この部品の機能は「NPN general purpose transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 PZTA06
部品説明 NPN general purpose transistor
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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PZTA06 Datasheet, PZTA06 PDF,ピン配置, 機能
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D087
PZTA06
NPN general purpose transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 14

1 Page





PZTA06 pdf, ピン配列
Philips Semiconductors
NPN general purpose transistor
Product specification
PZTA06
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
MIN.
65
65
MAX.
80
80
4
500
800
200
1.2
+150
150
+150
UNIT
V
V
V
mA
mA
mA
W
°C
°C
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other
mounting conditions, see “Thermal considerations for SOT223 in the General part of handbook SC04”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
103 K/W
22 K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other
mounting conditions, see “Thermal considerations for SOT223 in the General part of handbook SC04”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBE
fT
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter voltage
transition frequency
IE = 0; VCB = 80 V
IC = 0; VEB = 5 V
IC = 10 mA; VCE = 1 V
IC = 100 mA; VCE = 1 V
IC = 100 mA; IB = 10 mA
IC = 100 mA; VCE = 1 V
IC = 10 mA; VCE = 2 V; f = 100 MHz
100
100
100
MAX.
50
50
250
1.2
UNIT
nA
nA
mV
V
MHz
1997 Jul 14
3


3Pages


PZTA06 電子部品, 半導体
Philips Semiconductors
NPN general purpose transistor
NOTES
Product specification
PZTA06
1997 Jul 14
6

6 Page



ページ 合計 : 8 ページ
 
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共有リンク

Link :


部品番号部品説明メーカ
PZTA06

NPN general purpose transistor

NXP Semiconductors
NXP Semiconductors
PZTA06

NPN General Purpose Amplifier

Fairchild Semiconductor
Fairchild Semiconductor


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