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PZTA06のメーカーはNXP Semiconductorsです、この部品の機能は「NPN general purpose transistor」です。 |
部品番号 | PZTA06 |
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部品説明 | NPN general purpose transistor | ||
メーカ | NXP Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとPZTA06ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D087
PZTA06
NPN general purpose transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 14
1 Page Philips Semiconductors
NPN general purpose transistor
Product specification
PZTA06
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
80
80
4
500
800
200
1.2
+150
150
+150
UNIT
V
V
V
mA
mA
mA
W
°C
°C
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other
mounting conditions, see “Thermal considerations for SOT223 in the General part of handbook SC04”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
103 K/W
22 K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other
mounting conditions, see “Thermal considerations for SOT223 in the General part of handbook SC04”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBE
fT
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter voltage
transition frequency
IE = 0; VCB = 80 V
IC = 0; VEB = 5 V
IC = 10 mA; VCE = 1 V
IC = 100 mA; VCE = 1 V
IC = 100 mA; IB = 10 mA
IC = 100 mA; VCE = 1 V
IC = 10 mA; VCE = 2 V; f = 100 MHz
−
−
100
100
−
−
100
MAX.
50
50
−
−
250
1.2
−
UNIT
nA
nA
mV
V
MHz
1997 Jul 14
3
3Pages Philips Semiconductors
NPN general purpose transistor
NOTES
Product specification
PZTA06
1997 Jul 14
6
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ PZTA06 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
PZTA06 | NPN general purpose transistor | NXP Semiconductors |
PZTA06 | NPN General Purpose Amplifier | Fairchild Semiconductor |