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PZT2222AのメーカーはFairchild Semiconductorです、この部品の機能は「NPN General Purpose Amplifier」です。 |
部品番号 | PZT2222A |
| |
部品説明 | NPN General Purpose Amplifier | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとPZT2222Aダウンロード(pdfファイル)リンクがあります。 Total 8 pages
July 2014
MMBT2222A / PZT2222A
NPN General-Purpose Amplifier
Features
• This device is for use as a medium power amplifier and
switch requiring collector currents up to 500mA.
• Sourced from process 19.
C
E
SOT-23
Mark:1P
B
Figure 1. MMBT2222A Device Package
C
SOT-223
E
C
B
Figure 2. PZT2222A Device Package
Ordering Information
Part Number
MMBT2222A
PZT2222A
Top Mark
1P
2222A
Package
SOT-23 3L
SOT-223 4L
Packing Method
Tape and Reel
Tape and Reel
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
TSTG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
Value
40
75
6.0
1.0
-55 to 150
Unit
V
V
V
A
°C
Note:
1. These rating are based on a maximum junction temperature of 150 °C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operation.
© 2004 Fairchild Semiconductor Corporation
MMBT2222A / PZT2222A Rev. 1.1.0
www.fairchildsemi.com
1 Page Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Off Characteristics
BV(BR)CEO
Collector-Emitter Breakdown
Voltage(5)
IC = 10 mA, IB = 0
BV(BR)CBO
BV(BR)EBO
ICEX
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
ICBO Collector Cut-Off Current
IEBO Emitter Cut-Off Current
IBL Base Cut-Off Current
On Characteristics
IC = 10 μA, IE = 0
IE = 10 μA, IC = 0
VCE = 60 V, VEB(off) = 3.0 V
VCB = 60 V, IE = 0
VCB = 60 V, IE = 0, TA = 125°C
VEB = 3.0 V, IC = 0
VCE = 60 V, VEB(off) = 3.0 V
hFE DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage(5)
VBE(sat) Base-Emitter Saturation Voltage(5)
Small Signal Characteristics
IC = 0.1 mA, VCE = 10 V
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V,
TA = -55°C
IC = 150 mA, VCE = 10 V(5)
IC = 150 mA, VCE = 1 V(5)
IC = 500 mA, VCE = 10 V(5)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
fT Current Gain Bandwidth Product
IC = 20 mA, VCE = 20 V,
f = 100 MHz
Cobo
Cibo
rb’Cc
Output Capacitance
Input Capacitance
Collector Base Time Constant
VCB = 10 V, IE = 0, f = 1 MHz
VEB = 0.5 V, IC = 0, f = 1 MHz
IC = 20 mA, VCB = 20 V,
f = 31.8 MHz
NF
Re(hie)
Noise Figure
Real Part of Common-Emitter
High Frequency Input Impedance
IC = 100 μA, VCE = 10 V,
RS = 1.0 kΩ, f = 1.0 kHz
IC = 20 mA, VCE = 20 V,
f = 300 MHz
Switching Characteristics
td Delay Time
tr Rise Time
ts Storage Time
tf Fall Time
VCC = 30 V, VEB(off) = 0.5 V,
IC = 150 mA, IB1 = 15 mA
VCC = 30 V, IC = 150 mA,
IB1 = IB2 = 15 mA
Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Min.
40
75
6.0
35
50
75
35
100
50
40
0.6
300
Max. Unit
10
0.01
10
10
20
V
V
V
nA
μA
nA
nA
300
0.3
V
1.0
1.2
V
2.0
MHz
8.0 pF
25 pF
150 pS
4.0 dB
60 Ω
10 ns
25 ns
225 ns
60 ns
© 2004 Fairchild Semiconductor Corporation
MMBT2222A / PZT2222A Rev. 1.1.0
3
www.fairchildsemi.com
3Pages Physical Dimensions
2.92±0.20
3
0.95
1.40
1.30+-00..1250
2.20
(0.29)
1
0.95
1.90
1.20 MAX
(0.93)
C
GAGE PLANE
0.23
0.08
0.20 MIN
(0.55)
2
0.60
0.37
0.20
AB
1.90
LAND PATTERN
RECOMMENDATION
1.00
SEE DETAIL A
0.10
0.00
0.10
C
2.40±0.30
NOTES: UNLESS OTHERWISE SPECIFIED
0.25
SEATING
PLANE
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
SCALE: 2X
Figure 15. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA03D.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf.
© 2004 Fairchild Semiconductor Corporation
MMBT2222A / PZT2222A Rev. 1.1.0
6
www.fairchildsemi.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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