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TIP105 の電気的特性と機能

TIP105のメーカーはFairchild Semiconductorです、この部品の機能は「PNP Epitaxial Silicon Darlington Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 TIP105
部品説明 PNP Epitaxial Silicon Darlington Transistor
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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TIP105 Datasheet, TIP105 PDF,ピン配置, 機能
December 2014
TIP105 / TIP107
PNP Epitaxial Silicon Darlington Transistor
Features
• Monolithic Construction with Built-in Base-Emitter
Shunt Resistors
• High DC Current Gain:
hFE = 1000 @ VCE = -4 V, IC = -3 A (Minimum)
• Collector-Emitter Sustaining Voltage
• Low Collector-Emitter Saturation Voltage
• Industrial Use
• Complementary to TIP102
1 TO-220
1.Base 2.Collector 3.Emitter
Equivalent Circuit
C
B
R1
≅Ω
≅Ω
R2
E
Ordering Information
Part Number
TIP105
TIP105TU
TIP107
TIP107TU
Top Mark
TIP105
TIP105
TIP107
TIP107
Package
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
Packing Method
Bulk
Rail
Bulk
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
TIP105
TIP107
-60
-100
V
VCEO
Collector-Emitter Voltage
TIP105
TIP107
-60
-100
V
VEBO
IC
ICP
IB
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Junction Temperature
Storage Temperature Range
-5
-8
-15
-1
150
-65 to 150
V
A
A
A
°C
°C
© 2001 Fairchild Semiconductor Corporation
TIP105 / TIP107 Rev. 1.1.0
www.fairchildsemi.com

1 Page





TIP105 pdf, ピン配列
Typical Performance Characteristics
-5
IB = -1000μA
-4 IB = -900μA
-3
IB = -800μA
IB = -700μA
IB = -600μA
IB = -500μA
IB = -400μA
-2
IB = -300μA
-1
IB = -200μA
-0
-0 -1 -2 -3 -4
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-5
-100k
-10k
I = 500 I
CB
V (sat)
BE
-1k
V (sat)
CE
-100
-0.1 -1 -10 -100
I [A], COLLECTOR CURRENT
C
Figure 3. Collector-Emitter Saturation Voltage and
Base-Emitter Saturation Voltage
-100
1ms
-10
DC
-1
-0.1
-0.01
-0.1
TIP105
TIP106
TIP107
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
10k
VCE = -4V
1k
100
-0.1
-1
Ic[A], COLLECTOR CURRENT
Figure 2. DC Current Gain
-10
10k
f = 0.1 MHz
IE = 0
1k
100
10
1
-0.1 -1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
100
90
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 6. Power Derating
© 2001 Fairchild Semiconductor Corporation
TIP105 / TIP107 Rev. 1.1.0
3
www.fairchildsemi.com


3Pages


TIP105 電子部品, 半導体
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specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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