|
|
U130AのメーカーはFairchild Semiconductorです、この部品の機能は「Advanced Power MOSFET」です。 |
部品番号 | U130A |
| |
部品説明 | Advanced Power MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとU130Aダウンロード(pdfファイル)リンクがあります。 Total 7 pages
Advanced Power MOSFET
IRFR/U130A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
Lower RDS(ON) : 0.092 Ω (Typ.)
BVDSS = 100 V
RDS(on) = 0.11 Ω
ID = 13 A
D-PAK I-PAK
2
11
3
2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25 ΟC) *
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8”from case for 5-seconds
1. Gate 2. Drain 3. Source
Value
100
13
8.2
52
+_ 20
225
13
4.1
6.5
2.5
41
0.32
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/ ΟC
ΟC
Thermal Resistance
Symbol
Characteristic
Typ.
R θJC
R θJA
R θJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
3.08
50
110
Units
ΟC /W
Rev. B
©1999 Fairchild Semiconductor Corporation
1 Page N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
VGS
Top : 15V
10 V
8.0 V
7.0 V
6.0 V
101
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.20
0.15 VGS = 10 V
0.10
0.05
0.00
0
VGS = 20 V
@ Note : TJ = 25 oC
15 30 45
ID , Drain Current [A]
60
Fig 5. Capacitance vs. Drain-Source Voltage
1000
C iss
750
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
C oss
500
C rss
250
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
IRFR/U130A
Fig 2. Transfer Characteristics
101
150 oC
100
25 oC
10-1
2
- 55 oC
@ Notes :
1. V = 0 V
GS
2. VDS = 40 V
3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
10-1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD , Source-Drain Voltage [V]
2.2
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 20 V
10
VDS = 50 V
VDS = 80 V
5
@ Notes : ID = 14.0 A
0
0 5 10 15 20 25 30
QG , Total Gate Charge [nC]
3Pages IRFR/U130A
N-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
VGS Driver
RG
VGS
+
VDS
--
L
Same Type
as DUT
•dv/dt controlled by “RG”
•IS controlled by Duty Factor “D”
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a-t-e--P--u-l-s--e--W--i-d--t-h----
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
6 Page | |||
ページ | 合計 : 7 ページ | ||
|
PDF ダウンロード | [ U130A データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
U130A | Advanced Power MOSFET | Fairchild Semiconductor |