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What is VG3617801CT?

This electronic component, produced by the manufacturer "Vanguard International Semiconductor", performs the same function as "16Mb CMOS Synchronous Dynamic RAM".


VG3617801CT Datasheet PDF - Vanguard International Semiconductor

Part Number VG3617801CT
Description 16Mb CMOS Synchronous Dynamic RAM
Manufacturers Vanguard International Semiconductor 
Logo Vanguard International Semiconductor Logo 


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VIS
VG3617801CT
16Mb CMOS Synchronous Dynamic RAM
Description
The VG3617801CT is CMOS Synchronous Dynamic RAMs organized as 1,048,576-word X 8-bit X 2-
bank. It is fabricated with an advanced submicron CMOS technology and is designed to operate from a sin-
gle 3.3V power supply. This is packaged using JEDEC standard pinouts and standard plastic TSOP.
Features
• Single 3.3V(±0.3V ) power supply
• Clock Frequency:100MHz
• Fully synchronous with all signals referenced to a positive clock edge
• Programmable CAS Iatency (2,3)
• Programmable burst length (1,2,4,8,& Full page)
• Programmable wrap sequence (Sequential/Interleave)
• Automatic precharge and controlled precharge
• Auto refresh and self refresh modes
• Dual Internal banks controlled by A11(Bank select)
• Simultaneous and independent two bank operation
• I/O level : LVTTL interface
• Random column access in every cycle
• X8 organization
• Input/output control by DQM
• 2048 refresh cycles/32ms
• Burst termination by burst stop and precharge command
• Burst read single write option
Document:1G5-0133
Rev.1
Page 1

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VG3617801CT equivalent
VIS
VG3617801CT
16Mb CMOS Synchronous Dynamic RAM
DC Characteristics(Recommended Operating Conditions unless otherwise noted)
Parameter
Operating current
Symbol
Test Conditions
ICC1 Burst length=1
CL=3
-8H
Min Max
90
VG3617801CT
-8L -10
Min Max Min Max
90 85
Unit
mA
tRC tRC (MIN.),Io=0mA CL=2
One bank active
Precharge standby
current in power
down mode
ICC2P CKE V IL(MAX.)tCK=15ns
ICC2PS CKE V IL(MAX)tCK=
Precharge standby
current in Nonpower
down mode
ICC2N
CKE V IH(MIN.)tCK=15ns
CS V IH(MIN.)
Input signals are changed.
one time during 30ns.
ICC2NS CKE V IH(MIN.), tCK=
CLK V IL(MAX.)
Input signals are stable.
Active standby current Icc3P
in power down mode
Icc3PS
CKE V IL(MAX.),tCK=15ns
CKE V IL(MAX.),tCK=
Active standby current Icc3N
in nonpower down
mode
CKE V IL(MAX.),tCK=15ns
CS V IL(MIN.)
Input signals are changed
one time during 30ns
Icc3NS
CKE V IH(MIN.) tCK=
CLE V IL(MAX.)
Input signals are stable.
Operating current
(Burst mode)
Icc4 tCK tCK (MIN.),Io=0mA CL=3
Burst length=4
CL=2
85 85
33
22
30 30
80
3
2
30
66
33
22
30 30
6
3
2
30
15 15
15
120 120
115 105
105
100
Refresh current
Icc5
Self refresh current Icc6
Input leakage current ILI
Output leakage current ILO
Output Low Voltage VOL
Output High Voltage VOH
tRC tRC (MIN.)
CL=3
CL=2
110 110
105 105
100
95
CKE 0.2V
22
2
Vin 0 , Vin VDD +0.3V
-5 5 -5 5 -5 5
Pins not under test=0V
VOUT 0 , VOUT VDD +0.3V -5 5 -5 5 -5 5
DQ# in H-Z., Dout disabled
IOL=2mA
0.4 0.4
0.4
IOH=2mA
2.4 2.4 2.4
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
Notes
1,2
1,2
2
Notes 1.Icc depends on output loading and cycle rates. Specified values are obtained with the output open.
2.Icc is measured on condition that addresses are changed only one time during tCK(MIN.).
Document:1G5-0133
Rev.1
Page 5


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Featured Datasheets

Part NumberDescriptionMFRS
VG3617801CTThe function is 16Mb CMOS Synchronous Dynamic RAM. Vanguard International SemiconductorVanguard International Semiconductor

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