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PDF VS28F016SV Data sheet ( Hoja de datos )
| Número de pieza | VS28F016SV | |
| Descripción | 16-Mbit (1-Mbit x 16/ 2-Mbit x 8) FlashFileTM MEMORY | |
| Fabricantes | Intel Corporation | |
| Logotipo |  |
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VS28F016SV MS28F016SV
16-Mbit (1-Mbit x 16 2-Mbit x 8) FlashFileTM MEMORY
Y VS28F016SV
b40 C to a125 C
SE2 Grade
Y MS28F016SV
b55 C to a125 C
QML Certified
SE1 Grade
Y SmartVoltage Technology
User-Selectable 3 3V or 5V VCC
User-Selectable 5V or 12V VPP
Y Three Voltage Speed Options
80 ns Access Time 5 0V g5%
85 ns Access Time 5 0V g10%
120 ns Access Time 3 3V g10%
Y 1 Million Erase Cycles per Block
Typical
Y 14 3 MB sec Burst Write Transfer Rate
Y Configurable x8 or x16 Operation
Y 56-Lead SSOP Plastic Package
Y Backwards-Compatible with VE28F008
M28F008 and 28F016SA Command Set
Y Revolutionary Architecture
Multiple Command Execution
Write During Erase
Command Super-Set of the Intel
VE28F008 M28F008
Page Buffer Write
Y Multiple Power Savings Modes
Y Two 256-Byte Page Buffers
Y State-of-the-Art 0 6 mm ETOXTM IV
Flash Technology
Intel’s VS MS28F016SV 16-Mbit FlashFiIeTM Memory is the latest member of Intel’s high density high per-
formance memory family for the Industrial Special Environment and Military markets Its user selectable VCC
and VPP (SmartVoltage Technology) innovative capabilities 100% compatibility with the VE28F008 and
M28F008 multiple power savings modes selective block locking and very fast read write performance make
it the ideal choice for any applications that need a high density and a wide temperature range memory device
The VS MS28F016SV is the ideal choice for designers who need to break free from the dependence on slow
rotating media or battery backed up memory arrays
With two product grades (SE1 b55 C to a125 C and SE2 b40 C to a125 C) available the
VS MS28F016SV is perfect for the non-PC industries like Telecommunications Embedded Industrial Auto-
motive Navigation Wireless Communication Commercial Aircraft and all Military programs
The VS MS28F016SV’s x8 x16 architecture allows for the optimization of the memory to processor interface
The flexible block locking options enable bundling of executable application software in a Resident Flash Array
(RFA) PCMCIA Memory or ATA Cards or Memory modules
The VS MS28F016SV is offered in a 56-lead SS0P (Shrink Small Outline Package) and is manufactured on
Intel’s 0 6 mm ETOXTM IV process technology
Other brands and names are the property of their respective owners
Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or
copyright for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products Intel retains the right to make
changes to these specifications at any time without notice Microcomputer Products may have minor variations to this specification known as errata
COPYRIGHT INTEL CORPORATION 1995
December 1995
Order Number 271312-002
1 page  
VS28F016SV MS28F016SV FlashFileTM Memory
at logic high enables 16-bit operation with address
A1 becoming the lowest order address and address
A0 is not used (don’t care) A device block diagram
is shown in Figure 1
The VS MS28F016SV is specified for a maximum
access time of 80 ns (tACC) at 5 0V operation (4 75V
to 5 25V) in either the SE1 or SE2 grades A corre-
sponding maximum access time of 120 ns at 3 3V
(3 15V to 3 45V) is achieved for reduced power con-
sumption applications
The VS MS28F016SV incorporates an Automatic
Power Saving (APS) feature which substantially re-
duces the active current when the device is in static
mode of operation (addresses not switching) In APS
mode the typical ICC current is 1 mA at 5 0V (0 8 mA
at 3 3V)
A deep power-down mode of operation is invoked
when the RP (called PWD on the VE28F008 or
M28F008) pin transitions low This mode brings the
device power consumption to less than 30 0 mA typ-
ically and provides additional write protection by
acting as a device reset pin during power transitions
A reset time of 500 ns (5 0V VCC operation) is re-
quired from RP switching high until outputs are
again valid In the Deep Power-Down state the
WSM is reset (any current operation will abort) and
the CSR GSR and BSR registers are cleared
A CMOS standby mode of operation is enabled
when either CE0 or CE1 transitions high and
RP stays high with all input control pins at CMOS
levels In this mode the device typically draws an
ICC standby current of 70 mA at 5V VCC
2 0 DEVICE PINOUT
The VS MS28F016SV 56L-SSOP pinout configura-
tion is shown in Figure 2
5
5 Page 
VS28F016SV MS28F016SV FlashFileTM Memory
3 1 Extended Status Registers Memory Map
271312 – 4
Figure 4 Extended Status Register Memory Map
(Byte-Wide Mode)
271312 – 5
Figure 5 Extended Status Register Memory Map
(Word-Wide Mode)
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet VS28F016SV.PDF ] | |
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