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VNV20N07のメーカーはSTMicroelectronicsです、この部品の機能は「FULLY AUTOPROTECTED POWER MOSFET」です。 |
部品番号 | VNV20N07 |
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部品説明 | FULLY AUTOPROTECTED POWER MOSFET | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとVNV20N07ダウンロード(pdfファイル)リンクがあります。 Total 13 pages
VNP20N07FI
® VNB20N07/VNV20N07
"OMNIFET":
FULLY AUTOPROTECTED POWER MOSFET
TYPE
VNP20N07FI
VNB20N07
VNV20N07
Vclamp
70 V
70 V
70 V
RDS(on)
0.05 Ω
0.05 Ω
0.05 Ω
Ilim
20 A
20 A
20 A
s LINEAR CURRENT LIMITATION
s THERMAL SHUT DOWN
s SHORT CIRCUIT PROTECTION
s INTEGRATED CLAMP
s LOW CURRENT DRAWN FROM INPUT PIN
s DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
s ESD PROTECTION
s DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
s COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNP20N07FI, VNB20N07 and VNV20N07
are monolithic devices made using
STMicroelectronics VlPower M0 Technology,
intended for replacement of standard power
MOSFETS in DC to 50 KHz applications. Built-in
thermal shut-down, linear current limitation and
overvoltage clamp protect the chip in harsh
BLOCK DIAGRAM (∗)
ISOWATT220
3
2
1
3
1
D2PAK
TO-263
10
1
PowerSO-10
enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
(∗) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB
September 2013
1/13
1 Page VNP20N07FI-VNB20N07-VNV20N07
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (∗∗)
Symbol
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
(di/dt)on
Qi
Parameter
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Total Input Charge
Test Conditions
VDD = 15 V
Vgen = 10 V
(see figure 3)
Id = 10 A
Rgen = 10 Ω
VDD = 15 V
Vgen = 10 V
(see figure 3)
Id = 10 A
Rgen = 1000 Ω
VDD = 15 V
Vin = 10 V
VDD = 12 V
ID = 10 A
Rgen = 10 Ω
ID = 10 A Vin = 10 V
Min.
Typ.
90
240
430
150
800
1.5
6
3.5
60
Max.
180
400
800
300
1200
2.2
10
5.5
Unit
ns
ns
ns
ns
ns
µs
µs
µs
A/µs
60 nC
SOURCE DRAIN DIODE
Symbol
VSD (∗)
trr(∗∗)
Qrr(∗∗)
IRRM(∗∗)
Parameter
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
ISD = 10 A Vin = 0
ISD = 10 A di/dt = 100 A/µs
VDD = 30 V Tj = 25 oC
(see test circuit, figure 5)
Min.
Typ.
165
0.55
6.5
Max.
1.6
Unit
V
ns
µC
A
PROTECTION
Symbol
Parameter
Test Conditions
Ilim Drain Current Limit
tdlim(∗∗)
Tjsh(∗∗)
Step Response
Current Limit
Overtemperature
Shutdown
Vin = 10 V
Vin = 5 V
Vin = 10 V
Vin = 5 V
VDS = 13 V
VDS = 13 V
Tjrs(∗∗) Overtemperature Reset
Igf(∗∗) Fault Sink Current
Vin = 10 V
Vin = 5 V
Eas(∗∗) Single Pulse
Avalanche Energy
starting Tj = 25 oC VDD = 20 V
Vin = 10 V Rgen = 1 KΩ L = 10 mH
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization
Min.
14
14
150
135
0.95
Typ.
20
20
29
70
50
20
Max.
28
28
60
140
Unit
A
A
µs
µs
oC
oC
mA
mA
J
3/13
3Pages VNP20N07FI-VNB20N07-VNV20N07
Static Drain-Source On Resistance
Static Drain-Source On Resistance
Input Charge vs Input Voltage
Capacitance Variations
Normalized Input Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
6/13
6 Page | |||
ページ | 合計 : 13 ページ | ||
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PDF ダウンロード | [ VNV20N07 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
VNV20N07 | FULLY AUTOPROTECTED POWER MOSFET | STMicroelectronics |