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VNV10N07 の電気的特性と機能

VNV10N07のメーカーはSTMicroelectronicsです、この部品の機能は「FULLY AUTOPROTECTED POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 VNV10N07
部品説明 FULLY AUTOPROTECTED POWER MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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VNV10N07 Datasheet, VNV10N07 PDF,ピン配置, 機能
VNB10N07/K10N07FM
® VNP10N07FI/VNV10N07
"OMNIFET":
FULLY AUTOPROTECTED POWER MOSFET
TYPE
VNB10N07
VNK10N07FM
VNP10N07FI
VNV10N07
Vclamp
70 V
70 V
70 V
70 V
RDS(on)
0.1
0.1
0.1
0.1
Ilim
10 A
10 A
10 A
10 A
s LINEAR CURRENT LIMITATION
s THERMAL SHUT DOWN
s SHORT CIRCUIT PROTECTION
s INTEGRATED CLAMP
s LOW CURRENT DRAWN FROM INPUT PIN
s DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
s ESD PROTECTION
s DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
s COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNB10N07, VNK10N07FM, VNP10N07FI
and VNV10N07 are monolithic devices made
using STMicroelectronics VIPower M0
Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
BLOCK DIAGRAM ()
3
1
D2PAK
TO-263
SOT82-FM
3
2
1
ISOWATT220
10
1
PowerSO-10
the chip in harsh enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
() PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB
June 1998
1/14

1 Page





VNV10N07 pdf, ピン配列
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
ELECTRICAL CHARACTERISTICS (continued)
DYNAMIC
Symbol
gfs ()
C oss
Parameter
Forward
Transconductance
Output Capacitance
Test Conditions
VDS = 13 V ID = 5 A
VDS = 13 V f = 1 MHz Vin = 0
Min.
6
Typ.
8
Max.
Unit
S
350 500 pF
SWITCHING (**)
Symbol
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
(di/dt)on
Qi
Parameter
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Total Input Charge
Test Conditions
VDD = 15 V
Vgen = 10 V
(see figure 3)
Id = 5 A
Rgen = 10
VDD = 15 V
Vgen = 10 V
(see figure 3)
Id = 5 A
Rgen = 1000
VDD = 15 V
Vin = 10 V
VDD = 12 V
ID = 5 A
Rgen = 10
ID = 5 A Vin = 10 V
Min.
Typ.
50
80
230
100
600
0.9
3.8
1.7
60
Max.
100
160
400
180
900
2
6
2.5
Unit
ns
ns
ns
ns
ns
µs
µs
µs
A/µs
30 nC
SOURCE DRAIN DIODE
Symbol
Parameter
VSD () Forward On Voltage
trr (∗∗)
Qrr (∗∗)
IRRM (∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
ISD = 5 A Vin = 0
ISD = 5 A di/dt = 100 A/µs
VDD = 30 V Tj = 25 oC
(see test circuit, figure 5)
Min.
Typ.
125
0.3
4.8
Max.
1.6
Unit
V
ns
µC
A
PROTECTION
Symbol
Parameter
Test Conditions
Ilim Drain Current Limit
Vin = 10 V VDS = 13 V
Vin = 5 V VDS = 13 V
tdlim (∗∗) Step Response
Current Limit
Vin = 10 V
Vin = 5 V
Tjsh (∗∗) Overtemperature
Shutdown
Tjrs (∗∗) Overtemperature Reset
Igf (∗∗) Fault Sink Current
Vin = 10 V VDS = 13 V
Vin = 5 V VDS = 13 V
Eas (∗∗) Single Pulse
Avalanche Energy
starting Tj = 25 oC VDD = 20 V
Vin = 10 V Rgen = 1 KL = 10 mH
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization
Min.
7
7
150
135
0.4
Typ.
10
10
20
50
50
20
Max.
14
14
30
80
Unit
A
A
µs
µs
oC
oC
mA
mA
J
3/14


3Pages


VNV10N07 電子部品, 半導体
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
Static Drain-Source On Resistance
Static Drain-Source On Resistance
Input Charge vs Input Voltage
Capacitance Variations
Normalized Input Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
6/14

6 Page



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共有リンク

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部品番号部品説明メーカ
VNV10N07

FULLY AUTOPROTECTED POWER MOSFET

STMicroelectronics
STMicroelectronics


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