|
|
PDF VNS1NV04D Data sheet ( Hoja de datos )
| Número de pieza | VNS1NV04D | |
| Descripción | OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de VNS1NV04D (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
® VNS1NV04D
“OMNIFET II”:
FULLY AUTOPROTECTED POWER MOSFET
www.DataSheet4U.com
TYPE
RDS(on)
VNS1NV04D 250 mΩ (*)
Ilim
1.7 A (*)
Vclamp
40 V (*)
(*) Per each device
n LINEAR CURRENT LIMITATION
n THERMAL SHUT DOWN
n SHORT CIRCUIT PROTECTION
n INTEGRATED CLAMP
n LOW CURRENT DRAWN FROM INPUT PIN
n DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
n ESD PROTECTION
n DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
n COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNS1NV04D is a device formed by two
monolithic OMNIFET II chips housed in a
standard SO-8 package. The OMNIFET II are
designed in STMicroelectronics VIPower M0-3
BLOCK DIAGRAM
SO-8
Technology: they are intended for replacement of
standard Power MOSFETS from DC up to 50KHz
applications. Built in thermal shutdown, linear
current limitation and overvoltage clamp protects
the chip in harsh environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
INPUT1
DRAIN1
DRAIN2
GATE
CONTROL
OVERVOLTAGE
CLAMP
OVER
TEMPERATURE
LINEAR
CURRENT
LIMITER
OVERVOLTAGE
CLAMP
GATE
CONTROL
LINEAR
CURRENT
LIMITER
OVER
TEMPERATURE
SOURCE1
SOURCE2
INPUT2
February 2003
1/14
1
1 page  
VNS1NV04D
PROTECTION FEATURES
During normal operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path.
The device then behaves like a standard power
MOSFET and can be used as a switch from DC to
50KHz. The only difference from the user’s
standpoint is that a small DC current IISS (typ.
100µA) flows into the INPUT pin in order to supply
the internal circuitry.
The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:
internally set at 45V, along with the rugged
avalanche characteristics of the Power MOSFET
stage give this device unrivalled ruggedness and
energy handling capability. This feature is mainly
important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT: limits
the drain current ID to Ilim whatever the INPUT pin
voltage. When the current limiter is active, the
device operates in the linear region, so power
dissipation may exceed the capability of the
heatsink. Both case and junction temperatures
increase, and if this phase lasts long enough,
junction temperature may reach the
overtemperature threshold Tjsh.
- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing the
chip temperature and are not dependent on the
input voltage. The location of the sensing element
on the chip in the power stage area ensures fast,
accurate detection of the junction temperature.
Overtemperature cutout occurs in the range 150 to
190 °C, a typical value being 170 °C. The device is
automatically restarted when the chip temperature
falls of about 15°C below shut-down temperature.
- STATUS FEEDBACK: in the case of an
overtemperature fault condition (Tj > Tjsh), the
device tries to sink a diagnostic current Igf through
the INPUT pin in order to indicate fault condition. If
driven from a low impedance source, this current
may be used in order to warn the control circuit of
a device shutdown. If the drive impedance is high
enough so that the INPUT pin driver is not able to
supply the current Igf, the INPUT pin will fall to 0V.
This will not however affect the device
operation: no requirement is put on the current
capability of the INPUT pin driver except to be
able to supply the normal operation drive
current IISS.
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit.
5/14
1
5 Page 
VNS1NV04D
Normalized Input Threshold Voltage Vs.
Temperature
Vinth (V)
2
1.8
1.6 Vds=Vin
Id=1mA
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50 -25 0 25
50 75
Tc (ºC)
100 125 150 175
Step Response Current Limit
Tdlim(us)
2.4
Normalized Current Limit Vs. Junction
Temperature
Ilim (A)
5
4.5
4 Vin=5V
Vds=13V
3.5
3
2.5
2
1.5
1
0.5
0
-50 -25 0 25
50 75
Tc (ºC)
100 125 150 175
2.3
Vin=5V
Rg=330ohm
2.2
2.1
2
1.9
5
10 15 20 25 30 35
Vdd(V)
11/14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet VNS1NV04D.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| VNS1NV04 | OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET | STMicroelectronics |
| VNS1NV04D | OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |