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VNP5N07のメーカーはSTMicroelectronicsです、この部品の機能は「OMNIFET: FULLY AUTOPROTECTED POWER MOSFET」です。 |
部品番号 | VNP5N07 |
| |
部品説明 | OMNIFET: FULLY AUTOPROTECTED POWER MOSFET | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとVNP5N07ダウンロード(pdfファイル)リンクがあります。 Total 15 pages
VND5N07/VND5N07-1
VNP5N07FI/K5N07FM
"OMNIFET":
FULLY AUTOPROTECTED POWER MOSFET
Table 1. General Features
Type
Vclamp
RDS(on)
VND5N07
VND5N07-1
VND5N07FI
VND5N07FM
70 V
0.2 Ω
Ilim
5A
www.DataSheet4U.com
■ LINEAR CURRENT LIMITATION
■ THERMAL SHUT DOWN
■ SHORT CIRCUIT PROTECTION
■ INTEGRATED CLAMP
■ LOW CURRENT DRAWN FROM INPUT PIN
■ DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
■ ESD PROTECTION
■ DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
■ COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VND5N07, VND5N07-1, VNP5N07FI and
VNK5N07FM are monolithic devices made using
STMicroelectronics VIPower M0 Technology,
intended for replacement of standard power
MOSFETS in DC to 50 KHz applications. Built-in
thermal shut-down, linear current limitation and
overvoltage clamp protect the chip in harsh
enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Figure 1. Package
3
1
DPAK
TO-252
3
2
1
ISOWATT220
IPAK
TO-251
3
2
1
SOT-82FM
Table 2. Order Codes
Package
DPAK
IPAK
ISOWATT220
SOT-82FM
Tube
VND5N07
VND5N07-1
VND5N07FI
VND5N07FM
Tape and Reel
VND5N0713TR
–
–
–
June 2004
REV. 2
1/15
1 Page VND5N07/VND5N07-1/VNP5N07FI/K5N07FM
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified)
Table 5. Off
Symbol
Parameter
Test Conditions
VCLAMP Drain-source Clamp Voltage
ID = 200 mA; Vin = 0
VCLTH Drain-source Threshold Voltage ID = 2 mA; Vin = 0
VINCL Input-Source Reverse Clamp
Voltage
Iin = –1 mA
IDSS
Zero Input Voltage Drain
Current (Vin = 0)
VDS = 13 V; Vin = 0
VDS = 25 V; Vin = 0
IISS Supply Current from Input Pin VDS = 0 V; Vin = 10 V
Min.
60
55
–1
Typ.
70
Max.
80
–0.3
Unit
V
V
V
50
200
250 500
µA
µA
µA
Table 6. On (1)
Symbol
Parameter
Test Conditions
VIN(th) Input Threshold Voltage
VDS = Vin; ID + Iin = 1 mA
RDS(on) Static Drain-source On
Resistance
Vin = 10 V; ID = 2.5 A
Vin = 5 V; ID = 2.5 A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min.
0.8
Typ.
Max.
3
0.200
0.280
Unit
V
Ω
Ω
Table 7. Dynamic
Symbol
Parameter
Test Conditions
gfs (2) Forward Transconductance
VDS = 13 V; ID = 2.5 A
Coss Output Capacitance
VDS = 13 V; f = 1 MHz; Vin = 0
Note: 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Table 8. Switching (3)
Symbol
Parameter
Test Conditions
td(on) Turn-on Delay Time
VDD = 15 V; Id = 2.5 A;
tr Rise Time
Vgen = 10V; Rgen = 10 Ω
td(off) Turn-off Delay Time
(see Figure 28)
tf Fall Time
td(on) Turn-on Delay Time
VDD = 15 V; Id = 2.5 A;
tr Rise Time
Vgen = 10V; Rgen = 1000 Ω
td(off) Turn-off Delay Time
(see Figure 28)
tf Fall Time
(di/dt)on Turn-on Current Slope
VDD = 15 V; ID = 2.5 A
Vin = 10 V; Rgen = 10 Ω
Qi Total Input Charge
VDD = 12 V; ID = 2.5 A; Vin = 10 V
Note: 3. Parameters guaranteed by design/characterization.
Min. Typ.
34
200
Max.
300
Unit
S
pF
Min.
Typ.
50
60
150
40
150
400
3900
1100
80
Max.
100
100
300
80
250
600
5000
1600
Unit
ns
ns
ns
ns
ns
ns
ns
ns
A/µS
18 nC
3/15
3Pages VND5N07/VND5N07-1/VNP5N07FI/K5N07FM
Figure 9. Static Drain-Source On Resistance
Figure 10. Static Drain-Source On Resistance
Figure 11. Input Charge vs Input Voltage
Figure 12. Capacitance Variations
Figure 13. Normalized Input Threshold Voltage
vs Temperature
Figure 14. Normalized On Resistance vs
Temperature
6/15
6 Page | |||
ページ | 合計 : 15 ページ | ||
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PDF ダウンロード | [ VNP5N07 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
VNP5N07 | OMNIFET: FULLY AUTOPROTECTED POWER MOSFET | STMicroelectronics |
VNP5N07FI | OMNIFET: FULLY AUTOPROTECTED POWER MOSFET | STMicroelectronics |