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VNP35NV04 の電気的特性と機能

VNP35NV04のメーカーはSTMicroelectronicsです、この部品の機能は「OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 VNP35NV04
部品説明 OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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VNP35NV04 Datasheet, VNP35NV04 PDF,ピン配置, 機能
VNB35NV04 / VNP35NV04
® / VNV35NV04 / VNW35NV04
“OMNIFET II”:
FULLY AUTOPROTECTED POWER MOSFET
TYPE
VNB35NV04
VNP35NV04
VNV35NV04
VNW35NV04
RDS(on)
10 m(*)
Ilim
30 A
Vclamp
40 V
(*) For PowerSO-10 only
n LINEAR CURRENT LIMITATION
n THERMAL SHUT DOWN
n SHORT CIRCUIT PROTECTION
n INTEGRATED CLAMP
n LOW CURRENT DRAWN FROM INPUT PIN
n DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
n ESD PROTECTION
n DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
n COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNB35NV04, VNP35NV04, VNV35NV04,
VNW35NV04 are monolithic devices designed in
STMicroelectronics VIPower M0-3 Technology,
BLOCK DIAGRAM
3
1
D2PAK
10
1
PowerSO-10
3
2
1
TO-220
3
2
1
TO-247
ORDER CODES:
D2PAK
TO-220
VNB35NV04
VNP35NV04
PowerSO-10
VNV35NV04
TO-247
VNW35NV04
intended for replacement of standard Power
MOSFETS from DC up to 25KHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments. Fault feedback can be detected by
monitoring the voltage at the input pin.
Overvoltage
Clamp
DRAIN
2
INPUT
1
Gate
Control
July 2003
Over
Temperature
Linear
Current
Limiter
3
SOURCE
FC01000
1/19

1 Page





VNP35NV04 pdf, ピン配列
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
THERMAL DATA
Symbol
Rthj-case
Rthj-amb
Parameter
PowerSO-10
Thermal Resistance Junction-case}}} MAX
1
Thermal Resistance Junction-ambient MAX
50(*)
Value
D2PAK
1
50(*)
TO-220
1
50
TO-247
0.6
30
Unit
°C/W
°C/W
(*) When mounted on a standard single-sided FR4 board with 50mm2 of Cu (at least 35 µm thick) connected to all DRAIN pins.
ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified)
OFF
Symbol
VCLAMP
VCLTH
VINTH
IISS
VINCL
IDSS
Parameter
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input Threshold Voltage
Supply Current from Input
Pin
Input-Source Clamp
Voltage
Zero Input Voltage Drain
Current (VIN=0V)
Test Conditions
VIN=0V; ID=15A
VIN=0V; ID=2mA
VDS=VIN; ID=1mA
VDS=0V; VIN=5V
IIN=1mA
IIN=-1mA
VDS=13V; VIN=0V; Tj=25°C
VDS=25V; VIN=0V
Min Typ Max Unit
40 45 55
V
36 V
0.5 2.5 V
100 150 µA
6 6.8 8
-1.0 -0.3
V
30
µA
75
ON
Symbol
Parameter
Test Conditions
RDS(on)
Static Drain-source On
Resistance
VIN=5V; ID=15A; Tj=25°C
VIN=5V; ID=15A; Tj=150°C
Max
D2PAK
PowerSO-10
TO-220 / TO-247
10 13
20 24
Unit
m
3/19
1


3Pages


VNP35NV04 電子部品, 半導体
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Fig.1: Switching Time Test Circuit for Resistive Load
ID
Vgen
tr
td(on)
VD
Rgen
Vgen
90%
10%
tf
td(off)
Fig.2: Test Circuit for Diode Recovery Times
t
t
6/19
D
I
OMNIFET
25
S
AA
FAST
DIODE
B
L=100uH
B
Rgen
D
I
OMNIFET
VDD
Vgen
S
8.5

6 Page



ページ 合計 : 19 ページ
 
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共有リンク

Link :


部品番号部品説明メーカ
VNP35NV04

OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET

STMicroelectronics
STMicroelectronics
VNP35NV04-E

fully autoprotected Power MOSFET

STMicroelectronics
STMicroelectronics


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