DataSheet.jp

VNP20N07FI の電気的特性と機能

VNP20N07FIのメーカーはSTMicroelectronicsです、この部品の機能は「FULLY AUTOPROTECTED POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 VNP20N07FI
部品説明 FULLY AUTOPROTECTED POWER MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




このページの下部にプレビューとVNP20N07FIダウンロード(pdfファイル)リンクがあります。

Total 13 pages

No Preview Available !

VNP20N07FI Datasheet, VNP20N07FI PDF,ピン配置, 機能
VNP20N07FI
® VNB20N07/VNV20N07
"OMNIFET":
FULLY AUTOPROTECTED POWER MOSFET
TYPE
VNP20N07FI
VNB20N07
VNV20N07
Vclamp
70 V
70 V
70 V
RDS(on)
0.05
0.05
0.05
Ilim
20 A
20 A
20 A
s LINEAR CURRENT LIMITATION
s THERMAL SHUT DOWN
s SHORT CIRCUIT PROTECTION
s INTEGRATED CLAMP
s LOW CURRENT DRAWN FROM INPUT PIN
s DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
s ESD PROTECTION
s DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
s COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNP20N07FI, VNB20N07 and VNV20N07
are monolithic devices made using
STMicroelectronics VlPower M0 Technology,
intended for replacement of standard power
MOSFETS in DC to 50 KHz applications. Built-in
thermal shut-down, linear current limitation and
overvoltage clamp protect the chip in harsh
BLOCK DIAGRAM ()
ISOWATT220
3
2
1
3
1
D2PAK
TO-263
10
1
PowerSO-10
enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
() PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB
September 2013
1/13

1 Page





VNP20N07FI pdf, ピン配列
VNP20N07FI-VNB20N07-VNV20N07
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (∗∗)
Symbol
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
(di/dt)on
Qi
Parameter
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Total Input Charge
Test Conditions
VDD = 15 V
Vgen = 10 V
(see figure 3)
Id = 10 A
Rgen = 10
VDD = 15 V
Vgen = 10 V
(see figure 3)
Id = 10 A
Rgen = 1000
VDD = 15 V
Vin = 10 V
VDD = 12 V
ID = 10 A
Rgen = 10
ID = 10 A Vin = 10 V
Min.
Typ.
90
240
430
150
800
1.5
6
3.5
60
Max.
180
400
800
300
1200
2.2
10
5.5
Unit
ns
ns
ns
ns
ns
µs
µs
µs
A/µs
60 nC
SOURCE DRAIN DIODE
Symbol
VSD ()
trr(∗∗)
Qrr(∗∗)
IRRM(∗∗)
Parameter
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
ISD = 10 A Vin = 0
ISD = 10 A di/dt = 100 A/µs
VDD = 30 V Tj = 25 oC
(see test circuit, figure 5)
Min.
Typ.
165
0.55
6.5
Max.
1.6
Unit
V
ns
µC
A
PROTECTION
Symbol
Parameter
Test Conditions
Ilim Drain Current Limit
tdlim(∗∗)
Tjsh(∗∗)
Step Response
Current Limit
Overtemperature
Shutdown
Vin = 10 V
Vin = 5 V
Vin = 10 V
Vin = 5 V
VDS = 13 V
VDS = 13 V
Tjrs(∗∗) Overtemperature Reset
Igf(∗∗) Fault Sink Current
Vin = 10 V
Vin = 5 V
Eas(∗∗) Single Pulse
Avalanche Energy
starting Tj = 25 oC VDD = 20 V
Vin = 10 V Rgen = 1 KL = 10 mH
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization
Min.
14
14
150
135
0.95
Typ.
20
20
29
70
50
20
Max.
28
28
60
140
Unit
A
A
µs
µs
oC
oC
mA
mA
J
3/13


3Pages


VNP20N07FI 電子部品, 半導体
VNP20N07FI-VNB20N07-VNV20N07
Static Drain-Source On Resistance
Static Drain-Source On Resistance
Input Charge vs Input Voltage
Capacitance Variations
Normalized Input Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
6/13

6 Page



ページ 合計 : 13 ページ
 
PDF
ダウンロード
[ VNP20N07FI データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
VNP20N07FI

FULLY AUTOPROTECTED POWER MOSFET

STMicroelectronics
STMicroelectronics


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap