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VNP14N04FI の電気的特性と機能

VNP14N04FIのメーカーはSTMicroelectronicsです、この部品の機能は「OMNIFET: FULLY AUTOPROTECTED POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 VNP14N04FI
部品説明 OMNIFET: FULLY AUTOPROTECTED POWER MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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VNP14N04FI Datasheet, VNP14N04FI PDF,ピン配置, 機能
VNB14N04/K14N04FM
® VNP14N04FI/VNV14N04
”OMNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
T YPE
VNB14N04
VNK14N04FM
VNP14N04FI
VNV14N04
Vc lamp
42 V
42 V
42 V
42 V
R DS ( o n )
0.07
0.07
0.07
0.07
Ilim
14 A
14 A
14 A
14 A
s LINEAR CURRENT LIMITATION
s THERMAL SHUT DOWN
s SHORT CIRCUIT PROTECTION
s INTEGRATED CLAMP
s LOW CURRENT DRAWN FROM INPUT PIN
s DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
s ESD PROTECTION
s DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
s COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNB14N04, VNK14N04FM, VNP14N04FI
and VNV14N04 are monolithic devices made
using STMicroelectronics VIPower M0
Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
BLOCK DIAGRAM ()
3
1
D2PAK
TO-263
SOT82-FM
3
2
1
ISOWATT220
10
1
PowerSO-10
the chip in harsh enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
() PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB
June 1998
1/14

1 Page





VNP14N04FI pdf, ピン配列
VNB14N04-VNK14N04FM-VNP14N04FI-VNV14N04
ELECTRICAL CHARACTERISTICS (continued)
DYNAMIC
Symb ol
gfs ()
Coss
P a ram et er
Forward
T r ans c on duc ta nc e
Output Capacitance
Test Conditions
VDS = 13 V ID = 7 A
VDS = 13 V f = 1 MHz Vin = 0
Min.
8
Typ .
10
M a x.
Unit
S
400 500 pF
SWITCHING (**)
Symb ol
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
(di/ dt) on
Qi
P a ram et er
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Total Input Charge
Test Conditions
VDD = 15 V
Vgen = 10 V
(see figure 3)
Id = 7 A
Rgen = 10
VDD = 15 V
Vgen = 10 V
(see figure 3)
Id = 7 A
Rgen = 1000
VDD = 15 V
Vin = 10 V
VDD = 12 V
ID = 7 A
Rgen = 10
ID = 7 A Vin = 10 V
Min.
Typ .
60
160
250
100
300
1.5
5.5
1.8
120
M a x.
120
300
400
200
500
2.2
7.5
2.5
Unit
ns
ns
ns
ns
ns
µs
µs
µs
A/µs
30 nC
SOURCE DRAIN DIODE
Symb ol
P a ram et er
VSD () Forward O n Volt age
tr r (∗∗)
Qr r (∗∗)
IRRM (∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Cu r re nt
Test Conditions
ISD = 7 A Vin = 0
ISD = 7 A di/dt = 100 A/µs
VDD = 30 V Tj = 25 oC
(see test circuit, figure 5)
Min.
Typ .
110
M a x.
1.6
Unit
V
ns
0.34
µC
6.1 A
PROTECTION
Symb ol
P a ram et er
Test Conditions
Ilim Drain Current Limit
tdlim (∗∗) St ep Response
Current Limit
Vin = 10 V
Vin = 5 V
Vin = 10 V
Vin = 5 V
VDS = 13 V
VDS = 13 V
Tjsh (∗∗) Overtemperature
Shutdown
Tjrs (∗∗) Overtemperature Reset
Igf (∗∗) Fault Sink Current
Vin = 10 V VDS = 13 V
Vin = 5 V VDS = 13 V
Eas (∗∗) Single Pulse
Avalanche Energy
starting Tj = 25 oC VDD = 20 V
Vin = 10 V Rgen = 1 KL = 10 mH
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization
Min.
10
10
150
135
0.65
Typ .
14
14
30
80
50
20
M a x.
20
20
60
150
Unit
A
A
µs
µs
oC
oC
mA
mA
J
3/14


3Pages


VNP14N04FI 電子部品, 半導体
VNB14N04-VNK14N04FM-VNP14N04FI-VNV14N04
Static Drain-Source On Resistance
Static Drain-Source On Resistance
Input Charge vs Input Voltage
Capacitance Variations
Normalized Input Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
6/14

6 Page



ページ 合計 : 14 ページ
 
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部品番号部品説明メーカ
VNP14N04FI

OMNIFET: FULLY AUTOPROTECTED POWER MOSFET

STMicroelectronics
STMicroelectronics


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