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PDF VNK14N04FM Data sheet ( Hoja de datos )

Número de pieza VNK14N04FM
Descripción fully autoprotected Power MOSFET
Fabricantes STMicroelectronics 
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VNB14N04 - VNK14N04FM
VNV14N04
"OMNIFET"
fully autoprotected Power MOSFET
Features
Type
Vclamp
RDS(on)
Ilim
VNB14N04
t(s)VNK14N04FM
VNV14N04
42 V
42 V
42 V
0.07
0.07
0.07
14 A
14 A
14 A
ducs Linear current limitation
ros Thermal shutdown
Ps Short circuit protection
tes Integrated clamp
oles Low current drawn from input pin
ss Diagnostic feedback through input pin
Obs ESD protection
-s Direct access to the gate of the power
)MOSFET (analog driving)
Obsolete Product(ss Compatible with standard power MOSFET
Description
The VNB14N04, VNK14N04FM and VNV14N04
are monolithic devices made using
STMicroeletronics VIPower M0 Technology,
intended for replacement of standard power
MOSFETS in DC to 50 kHz applications. Built-in
thermal shutdown, linear current limitation and
overvoltage clamp protect the chip in harsh
environment.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Table 1. Device summary
Part number
Order code
VNB14N04
VNB14N04, VNB14N04-E,
VNB14N0413TR, VNB14N04TR-E
VNK14N04FM VNK14N04FM
VNV14N04 VNV14N04, VNV14N04-E
September 2013
Rev 7
1/17
www.st.com
17

1 page




VNK14N04FM pdf
VNB14N04 - VNK14N04FM - VNV14N04
Electrical specification
Table 4. Electrical characteristics (continued)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IDSS
IISS
On(1)
Zero input voltage drain current (Vin = 0)
VDS = 13 V Vin = 0
VDS = 25 V Vin = 0
Supply current from input pin
VDS = 0 V Vin = 10 V
50
200
250 500
µA
µA
µA
VIN(th) Input threshold voltage
VDS = Vin ID + Iin = 1 mA
0.8 3 V
RDS(on) Static drain-source on resistance
Vin = 10 V ID = 7 A
Vin = 5 V ID = 7 A
0.7
0.1
Dynamic
t(s)gfs (1) Forward transconductance
cCoss Output capacitance
duSwitching(2)
rotd(on)
Ptr
tetd(off)
letf
sotd(on)
btr
Otd(off)
-tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t(s)(di/dt)on Turn-on current slope
ucQi Total input charge
rodSource drain diode
PVSD (1)
tetrr (2)
leQrr (2)
soIRRM (2)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ObProtection
VDS = 13 V ID = 7 A
VDS = 13 V f = 1 MHz Vin = 0
8 10
S
400 500 pF
VDD = 15 V Id = 7 A
Vgen = 10 V Rgen = 10
(see Figure 26)
VDD = 15 V Id = 7 A
Vgen = 10 V Rgen = 1000
(see Figure 26)
VDD = 15 V ID = 7 A
Vin = 10 V Rgen = 10
VDD = 12 V ID = 7 A Vin = 10 V
60 120
160 300
250 400
100 200
300 500
1.5 2.2
5.5 7.5
1.8 2.5
ns
ns
ns
ns
ns
µs
µs
µs
120 A/µs
30 nC
ISD = 7 A Vin = 0
ISD = 7 A di/dt = 100 A/µs
VDD = 30 V Tj = 25 °C
(see test circuit, Figure 28)
1.6
110
0.34
6.1
V
ns
µC
A
Ilim Drain current limit
Vin = 10 V VDS = 13 V
Vin = 5 V VDS = 13 V
10 14 20
10 14 20
A
A
tdlim (2)
Tjsh (2)
Tjrs (2)
Step response
Current limit
Overtemperature shutdown
Overtemperature reset
Vin = 10 V
Vin = 5 V
30 60 µs
80 150 µs
150 °C
135 °C
5/17

5 Page





VNK14N04FM arduino
VNB14N04 - VNK14N04FM - VNV14N04
Protection features
Figure 20. Switching time resistive load (part Figure 21. Current limit vs junction
3/3) temperature
Obsolete Product(s) - Obsolete Product(s)Figure 22. Step response current limit
Figure 23. Source drain diode forward
characteristics
11/17

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