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VND600SP の電気的特性と機能

VND600SPのメーカーはSTMicroelectronicsです、この部品の機能は「DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY」です。


製品の詳細 ( Datasheet PDF )

部品番号 VND600SP
部品説明 DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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VND600SP Datasheet, VND600SP PDF,ピン配置, 機能
www.DataSheet4U.com
® VND600
DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY
TYPE
VND600
RDS(on)
35m
Ilim
25A
VCC
36 V
s DC SHORT CIRCUIT CURRENT: 25 A
s CMOS COMPATIBLE INPUTS
s PROPORTIONAL LOAD CURRENT SENSE
ns UNDERVOLTAGE AND OVERVOLTAGE
SHUT-DOWN
s OVERVOLTAGE CLAMP
s THERMAL SHUT DOWN
s CURRENT LIMITATION
s VERY LOW STAND-BY POWER DISSIPATION
s PROTECTION AGAINST:
n LOSS OF GROUND AND LOSS OF VCC
s REVERSE BATTERY PROTECTION (*)
DESCRIPTION
The VND600 is a monolithic device made using
STMicroelectronics VIPower M0-3 technology. It
is intended for driving resistive or inductive loads
with one side connected to ground. Active VCC pin
voltage clamp protects the device against low
energy spikes (see ISO7637 transient
BLOCK DIAGRAM
SO-16L
ORDER CODES
PACKAGE
TUBE
T&R
SO-16L
VND600 VND60013TR
compatibility table). This device has two channels
in high side configuration; each channel has an
analog sense output on which the sensing current
is proportional (according to a known ratio) to the
corresponding load current. Built-in thermal shut-
down and outputs current limitation protect the
chip from over temperature and short circuit.
Device turns off in case of ground pin
disconnection.
VCC
INPUT 1
INPUT 2
GND
VCC CLAMP
LOGIC
Ot1
OVERTEMP. 1
Ot2
OVERTEMP. 2
OVERVOLTAGE
UNDERVOLTAGE
DRIVER 1
PwCLAMP 1
ILIM1
Vdslim1
IOUT1
K
Ot1
DRIVER 2
PwCLAMP 2
ILIM2
Vdslim2
IOUT2
K
Ot2
OUTPUT 1
CURRENT
SENSE 1
OUTPUT 2
CURRENT
SENSE 2
(*) See application schematic at page 8
July 2004
Rev. 2
1/18

1 Page





VND600SP pdf, ピン配列
VND600
THERMAL DATA
Symbol
Rthj-lead
Rthj-amb
Parameter
Thermal resistance junction-lead
Thermal resistance junction-ambient
(MAX)
(MAX)
Value
15
65 (*)
48 (**)
Unit
°C/W
°C/W
(*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick). Horizontal mounting and no artificial air
flow.
(**) When mounted on a standard single-sided FR-4 board with 6 cm2 of Cu (at least 35µm thick). Horizontal mounting and no artificial air
flow.
ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C<Tj<150°C; unless otherwise specified)
(Per each channel)
POWER
Symbol
Parameter
Test Conditions
Min Typ Max Unit
VCC (**)
VUSD (**)
VOV (**)
Operating supply voltage
Undervoltage shutdown
Overvoltage shutdown
IOUT=5A; Tj=25°C
5.5 13 36 V
3 4 5.5 V
36 V
35 m
RON
Vclamp
On state resistance
Clamp voltage
IS (**) Supply current
IOUT=5A; Tj=150°C
IOUT=3A; VCC=6V
ICC=20 mA (see note 1)
Off State; VCC=13V; VIN=VOUT=0V
Off State; VCC=13V; VIN=VOUT=0V; Tj=25°C
On state; VIN=5V; VCC=13V; IOUT=0A;
RSENSE=3.9k
41
70 m
120 m
48 55 V
12 40 µA
12 25 µA
6 mA
IL(off1)
IL(off2)
IL(off3)
IL(off4)
Off state output current
Off State Output Current
Off State Output Current
Off State Output Current
VIN=VOUT=0V
VIN=0V; VOUT=3.5V
VIN=VOUT=0V; VCC=13V; Tj =125°C
VIN=VOUT=0V; VCC=13V; Tj =25°C
0
-75
50 µA
0 µA
5 µA
3 µA
(**) Per device.
PROTECTIONS (Per each channel) (See note 1)
Symbol
Ilim
TTSD
TR
THYST
Vdemag
VON
Parameter
DC short circuit current
Thermal shut-down
Test Conditions
VCC=13V
5.5V<VCC<36V
temperature
Thermal reset
temperature
Thermal hysteresis
Turn-off output voltage IOUT=2A; VIN=0V; L=6mH
clamp
Output voltage drop
limitation
IOUT=0.5A
Tj= -40°C...+150°C
Min Typ Max Unit
25 40 70 A
70 A
150 175 200 °C
135 °C
7 15
°C
VCC-41 VCC-48 VCC-55 V
50 mV
Note 1: To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used
together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration and number
of activation cycles.
VCC - OUTPUT DIODE
Symbol
Parameter
VF Forward on Voltage
Test Conditions
-IOUT=2.3A; Tj=150°C
Min Typ Max Unit
0.6 V
3/18
1


3Pages


VND600SP 電子部品, 半導体
VND600
ELECTRICAL TRANSIENT REQUIREMENTS
ISO T/R 7637/1
Test Pulse
1
2
3a
3b
4
5
I
-25 V
+25 V
-25 V
+25 V
-4 V
+26.5 V
II
-50 V
+50 V
-50 V
+50 V
-5 V
+46.5 V
TEST LEVELS
III
-75 V
+75 V
-100 V
+75 V
-6 V
+66.5 V
IV
-100 V
+100 V
-150 V
+100 V
-7 V
+86.5 V
Delays and
Impedance
2 ms 10
0.2 ms 10
0.1 µs 50
0.1 µs 50
100 ms, 0.01
400 ms, 2
ISO T/R 7637/1
Test Pulse
1
2
3a
3b
4
5
I
C
C
C
C
C
C
TEST LEVELS RESULTS
II III
CC
CC
CC
CC
CC
EE
IV
C
C
C
C
C
E
CLASS
C
E
CONTENTS
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device is not performed as designed after exposure to disturbance
and cannot be returned to proper operation without replacing the device.
Figure 1: Switching Characteristics (Resistive load RL=2.6)
VOUT
80%
dVOUT/dt(on)
tr
ISENSE
90%
10%
90%
dVOUT/dt(off)
tf
t
INPUT
tDSENSE
td(on)
td(off)
t
t
6/18

6 Page



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共有リンク

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部品番号部品説明メーカ
VND600SP

DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY

STMicroelectronics
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VND600SP-E

DOUBLE CHANNEL HIGH SIDE DRIVER

ST Microelectronics
ST Microelectronics
VND600SP13TR

DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY

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