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VND1NV04 の電気的特性と機能

VND1NV04のメーカーはSTMicroelectronicsです、この部品の機能は「OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 VND1NV04
部品説明 OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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VND1NV04 Datasheet, VND1NV04 PDF,ピン配置, 機能
VND1NV04
® / VNN1NV04 / VNS1NV04
“OMNIFET II”:
FULLY AUTOPROTECTED POWER MOSFET
www.DataSheet4U.com
TYPE
VND1NV04
VNN1NV04
VNS1NV04
RDS(on)
250 m
Ilim
1.7 A
Vclamp
40 V
n LINEAR CURRENT LIMITATION
n THERMAL SHUT DOWN
n SHORT CIRCUIT PROTECTION
n INTEGRATED CLAMP
n LOW CURRENT DRAWN FROM INPUT PIN
n DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
n ESD PROTECTION
n DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
n COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VND1NV04, VNN1NV04, VNS1NV04 are
monolithic
devices
designed
in
STMicroelectronics VIPower M0-3 Technology,
intended for replacement of standard Power
BLOCK DIAGRAM
2
3
2
1
SOT-223
SO-8
3
1
TO-252 (DPAK)
ORDER CODES:
TO-252 (DPAK)
SOT-223
SO-8
VND1NV04
VNN1NV04
VNS1NV04
MOSFETS from DC up to 50KHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Overvoltage
Clamp
DRAIN
2
INPUT
1
Gate
Control
February 2003
Over
Temperature
Linear
Current
Limiter
3
SOURCE
FC01000
1/18

1 Page





VND1NV04 pdf, ピン配列
VND1NV04 / VNN1NV04 / VNS1NV04
THERMAL DATA
Symbol
Parameter
Rthj-case
Rthj-lead
Rthj-amb
Thermal Resistance Junction-case}}}
Thermal Resistance Junction-lead
Thermal Resistance Junction-ambient
MAX
MAX
MAX
SOT-223
18
70 (*)
Value
SO-8
15
65(*)
DPAK
3.5
54 (*)
(*) When mounted on a standard single-sided FR4 board with 50mm2 of Cu (at least 35 µm thick) connected to all DRAIN pins.
ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified)
OFF
Symbol
VCLAMP
VCLTH
VINTH
IISS
VINCL
IDSS
Parameter
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input Threshold Voltage
Supply Current from Input
Pin
Input-Source Clamp
Voltage
Zero Input Voltage Drain
Current (VIN=0V)
Test Conditions
VIN=0V; ID=0.5A
VIN=0V; ID=2mA
VDS=VIN; ID=1mA
VDS=0V; VIN=5V
IIN=1mA
IIN=-1mA
VDS=13V; VIN=0V; Tj=25°C
VDS=25V; VIN=0V
Min Typ Max
40 45 55
36
0.5 2.5
100 150
6 6.8 8
-1.0 -0.3
30
75
ON
Symbol
RDS(on)
Parameter
Static Drain-source On
Resistance
Test Conditions
VIN=5V; ID=0.5A; Tj=25°C
VIN=5V; ID=0.5A
Min Typ Max
250
500
Unit
°C/W
°C/W
°C/W
Unit
V
V
V
µA
V
µA
Unit
m
3/18
1


3Pages


VND1NV04 電子部品, 半導体
VND1NV04 / VNN1NV04 / VNS1NV04
Figure 1: Switching Time Test Circuit for Resistive Load
VD
Rgen
Vgen
ID
90%
Vgen
tr
td(on)
10%
tf
td(off)
Figure 2: Test Circuit for Diode Recovery Times
t
t
6/18
D
I
OMNIFET
S
330
AA
FAST
DIODE
B
L=100uH
B
Rgen
D
I
OMNIFET
VDD
Vgen
S
8.5

6 Page



ページ 合計 : 18 ページ
 
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[ VND1NV04 データシート.PDF ]


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共有リンク

Link :


部品番号部品説明メーカ
VND1NV04

OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET

STMicroelectronics
STMicroelectronics


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