DataSheet.jp

VND10N06-1 の電気的特性と機能

VND10N06-1のメーカーはSTMicroelectronicsです、この部品の機能は「ISO HIGH SIDE SMART POWER SOLID STATE RELAY」です。


製品の詳細 ( Datasheet PDF )

部品番号 VND10N06-1
部品説明 ISO HIGH SIDE SMART POWER SOLID STATE RELAY
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




このページの下部にプレビューとVND10N06-1ダウンロード(pdfファイル)リンクがあります。

Total 14 pages

No Preview Available !

VND10N06-1 Datasheet, VND10N06-1 PDF,ピン配置, 機能
VND10N06/VND10N06-1
VNP10N06FI/K10N06FM
”OMNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
TYPE
V ND 10 N06
V ND 10 N06- 1
VNP10N06FI
VNK10N06FM
Vcl amp
60 V
60 V
60 V
60 V
RDS(on )
0.3
0.3
0.3
0.3
Ilim
10 A
10 A
10 A
10 A
s LINEAR CURRENT LIMITATION
s THERMAL SHUT DOWN
s SHORT CIRCUIT PROTECTION
s INTEGRATED CLAMP
s LOW CURRENT DRAWN FROM INPUT PIN
s LOGIC LEVEL INPUT THRESHOLD
s ESD PROTECTION
s SCHMITT TRIGGER ON INPUT
s HIGH NOISE IMMUNITY
DESCRIPTION
The VND10N06, VND10N06-1, VNP10N06FI and
VNK10N06FM are monolithic devices made
using SGS-THOMSON Vertical Intelligent Power
M0 Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
the chip in harsh enviroments.
3
1
DPAK
TO-252
3
2
1
IPAK
TO-251
3
2
1
ISOWATT220
SOT82-FM
BLOCK DIAGRAM (*)
() SOT82-FM Pin Configuration: INPUT = 3; SOURCE = 1; DRAIN = 2.
October 1997
1/14

1 Page





VND10N06-1 pdf, ピン配列
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
ELECTRICAL CHARACTERISTICS (continued)
DYNAMIC
Symb ol
P a ram et er
Coss Output Capacitance
Test Conditions
VDS = 13 V f = 1 MHz Vin = 0
Min.
Typ .
350
M a x.
500
Unit
pF
SWITCHING (**)
Symb ol
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
(di/ dt) on
Qi
P a ram et er
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Total Input Charge
Test Conditions
VDD = 16 V
Id = 1 A
Vgen = 7 V
Rgen = 10
(see figure 3)
VDD = 16 V
Id = 1 A
Vgen = 7 V
Rgen = 1000
(see figure 3)
VDD = 16 V
Vin = 7 V
VDD = 12 V
ID = 1 A
Rgen = 10
ID = 1 A Vin = 7 V
Min.
Typ .
1100
550
200
100
1.2
1
1.6
1.2
1.5
M a x.
1600
900
400
200
1.8
1.5
2.3
1.8
Unit
ns
ns
ns
ns
µs
µs
µs
µs
A/µs
13 nC
SOURCE DRAIN DIODE
Symb ol
P a ram et er
VSD () Forward O n Volt age
tr r (∗∗)
Qr r (∗∗)
IRRM (∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Cu r re nt
Test Conditions
ISD = 1 A Vin = VIL
ISD = 1 A di/dt = 100 A/µs
VDD = 30 V Tj = 25 oC
(see test circuit, figure 5)
Min.
Typ .
0.8
125
0.22
3.5
M a x.
1.6
Unit
V
ns
µC
A
PROTECTION
Symb ol
P a ram et er
Test Conditions
Ilim Drain Current Limit
Vin = 7 V VDS = 13 V
tdlim (∗∗) St ep Response
Current Limit
Vin = 7 V VDS step from 0 to 13 V
Tjsh (∗∗) Overtemperature
Shutdown
Tjrs (∗∗) Overtemperature Reset
Eas (∗∗) Single Pulse
Avalanche Energy
starting Tj = 25 oC VDD = 24 V
Vin = 7 V Rgen = 1 KL = 10 mH
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization
Min.
6
Typ .
10
12
M a x.
15
20
Unit
A
µs
150 oC
135 oC
250 mJ
3/14


3Pages


VND10N06-1 電子部品, 半導体
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
Static Drain-Source On Resistance
Static Drain-Source On Resistance
Input Charge vs Input Voltage
Capacitance Variations
Normalized Input Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
6/14

6 Page



ページ 合計 : 14 ページ
 
PDF
ダウンロード
[ VND10N06-1 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
VND10N06-1

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

STMicroelectronics
STMicroelectronics


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap