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PDF VND05B Data sheet ( Hoja de datos )
| Número de pieza | VND05B | |
| Descripción | DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | |
| Fabricantes | STMicroelectronics | |
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VND05B
® / VND05B (011Y) / VND05B (012Y)
DOUBLE CHANNEL
HIGH SIDE SMART POWER SOLID STATE RELAY
TYPE
VND05B
VND05B (011Y)
VND05B (012Y)
VDSS
40V
RDS(on)
200mΩ
In (*)
1.6A
VCC
26 V
s OUTPUT CURRENT (CONTINUOUS): 9A AT
Tc=85°C PER CHANNEL
s 5V LOGIC LEVEL COMPATIBLE INPUT
s THERMAL SHUT-DOWN
s UNDERVOLTAGE PROTECTION
s OPEN DRAIN DIAGNOSTIC OUTPUT
s INDUCTIVE LOAD FAST DEMAGNETIZATION
s VERY LOW STAND-BY POWER DISSIPATION
DESCRIPTION
The VND05B, VND05B (011Y), VND05B (012Y) is
a monolithic device designed in
STMicroelectronics VIPower technology, intended
for driving resistive or inductive loads with one
side connected to ground. This device has two
channels, and a common diagnostic. Built-in
thermal shutdown protects the chip from
overtemperature and short circuit. The status
output provides an indication of open load in on
state, open load in off state, overtemperature
conditions and stuck-on to VCC.
BLOCK DIAGRAM
HEPTAWATT
(vertical)
HEPTAWATT
(horizontal)
HEPTAWATT
(in-line)
ORDER CODES
HEPTAWATT vertical VND05B
HEPTAWATT horizontal VND05B (011Y)
HEPTAWATT in-line
VND05B (012Y)
(*) In= Nominal current according to ISO definition for high side automotive switch (see note 1)
November 1999
1/11
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1 page  
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Switching Time Waveforms
VND05B / VND05B (011Y) / VND05B (012Y)
FUNCTIONAL DESCRIPTION
The device has a common diagnostic output for
both channels which indicates open load in on-
state, open load in off-state, overtemperature
conditions and stuck-on to VCC.
From the falling edge of the input signal, the status
output, initially low to signal a fault condition
(overtemperature or open load on-state), will go
back to a high state with a different delay in case of
overtemperature (tpovl) and in case of open load
(tpol) respectively. This feature allows to
discriminate the nature of the detected fault. To
protect the device against short-circuit and
overcurrent condition, the thermal protection turns
the integrated PowerMOS off at a minimum
junction temperature of 140°C. When this
temperature returns to 125°C the switch is
automatically turned in again. In short-circuit the
protection reacts with virtually no delay, the sensor
(one for each channel) being located inside each
of the two PowerMOS areas. This positioning
allows the device to operate with one channel in
automatic thermal cycling and the other one on a
normal load. An internal function of the devices
ensures the fast demagnetization of inductive
loads with a typical voltage (Vdemag) of -18V. This
function allows to greatly reduce the power
dissipation according to the formula:
Pdem= 0.5•Lload•(Iload)2•[(VCC+Vdemag)/Vdemag]•f
where f= switching frequency and
Vdemag = demagnetization voltage.
The maximum inductance which causes the chip
temperature to reach the shutdown temperature in
a specified thermal environment is a function of
the load current for a fixed VCC, Vdemag and f
according to the above formula. In this device if the
GND pin is disconnected, with VCC not exceeding
16V, both channels will switch off.
PROTECTING THE DEVICE AGAINST
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 2 (GND) and
ground, as shown in the typical application circuit
(fig. 2).
The consequences of the voltage drop across this
diode are as follows:
- If the input is pulled to power GND, a negative
voltage of -Vf is seen by the device. (Vil, Vih
thresholds and VSTAT are increased by Vf with
respect to power GND).
- The undervoltage shutdown level is increased by
Vf.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to the device
ground (see application circuit in fig. 3), which
becomes the common signal GND for the whole
control board avoiding shift on Vil, Vih and VSTAT.
This solution allows the use of a standard diode.
5/11
5 Page 
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VND05B / VND05B (011Y) / VND05B (012Y)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in ITALY- All Rights Reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco -
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .
http://ww w.st.com
11/11
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet VND05B.PDF ] | |
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