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VN2406LのメーカーはMotorola Incです、この部品の機能は「TMOS FET Transistor」です。 |
部品番号 | VN2406L |
| |
部品説明 | TMOS FET Transistor | ||
メーカ | Motorola Inc | ||
ロゴ | |||
このページの下部にプレビューとVN2406Lダウンロード(pdfファイル)リンクがあります。 Total 4 pages
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by VN2406L/D
TMOS FET Transistor
N–Channel — Enhancement
3 DRAIN
2
GATE
VN2406L
Motorola Preferred Device
1 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
Drain – Gate Voltage
Gate – Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
Continuous Drain Current
Pulsed Drain Current
Power Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VDGR
240
60
Vdc
Vdc
VGS
VGSM
± 20
± 40
Vdc
Vpk
ID 200 mAdc
IDM 500 mAdc
PD 350 mW
2.8 mW/°C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
TJ, Tstg
—
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/16″ from case for 10
seconds
RθJA
TL
312.5
300
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
STATIC CHARACTERISTICS
Drain – Source Breakdown Voltage
(VGS = 0, ID = 100 µA)
Zero Gate Voltage Drain Current
(VDS = 120 Vdc, VGS = 0)
(VDS = 120 Vdc, VGS = 0, TA = 125°C)
Gate– Body Leakage
(VDS = 0, VGS = ±15 V)
V(BR)DSS
IDSS
IGSS
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mA)
On–State Drain Current(1)
(VGS = 10 V, VDS ≥ 2.0 VDS(on))
Drain–Source On Resistance(1)
(VGS = 2.5 V, ID = 0.1 A)
(VGS = 10 V, ID = 0.5 A)
Forward Transconductance(1)
(VDS = 10 V, ID = 0.5 A)
v1. Pulse Test; Pulse Width < 300 µs, Duty Cycle 2.0%.
VGS(th)
ID(on)
rDS(on)
gfs
TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1
2
3
CASE 29–04, STYLE 22
TO–92 (TO–226AA)
Min Max Unit
240 — Vdc
µAdc
— 10
— 500
—
±100
nAdc
0.8 2.0 Vdc
1.0 — Adc
Ω
— 10
— 6.0
300 — mS
1
1 Page PACKAGE DIMENSIONS
VN2406L
R
SEATING
PLANE
AB
P
L
F
K
XX
H
V
G
C
1
N
N
D
J
SECTION X–X
CASE 029–04
(TO–226AA)
ISSUE AD
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
INCHES
DIM MIN MAX
A 0.175 0.205
B 0.170 0.210
C 0.125 0.165
D 0.016 0.022
F 0.016 0.019
G 0.045 0.055
H 0.095 0.105
J 0.015 0.020
K 0.500 –––
L 0.250 –––
N 0.080 0.105
P ––– 0.100
R 0.115 –––
V 0.135 –––
MILLIMETERS
MIN MAX
4.45 5.20
4.32 5.33
3.18 4.19
0.41 0.55
0.41 0.48
1.15 1.39
2.42 2.66
0.39 0.50
12.70 –––
6.35 –––
2.04 2.66
––– 2.54
2.93 –––
3.43 –––
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ VN2406L データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
VN2406 | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
VN2406D | N-Channel 240-V (D-S) MOSFETs | Vishay Siliconix |
VN2406L | Small Signal MOSFET | ON Semiconductor |
VN2406L | TMOS FET Transistor | Motorola Inc |