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PDF VN20AN Data sheet ( Hoja de datos )
| Número de pieza | VN20AN | |
| Descripción | HIGH SIDE SMART POWER SOLID STATE RELAY | |
| Fabricantes | STMicroelectronics | |
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VN20AN
HIGH SIDE SMART POWER SOLID STATE RELAY
TYPE
VN20AN
VDSS
60 V
R DS( on)
0.05 Ω
IOUT
33 A
VC C
36 V
s OUTPUT CURRENT (CONTINUOUS):
33A @ Tc=25oC
s LOGIC LEVEL 5V COMPATIBLE INPUT
s THERMAL SHUT-DOWN
s UNDER VOLTAGE PROTECTION
s OPEN DRAIN DIAGNOSTIC OUTPUT
s FAST DEMAGNETIZATION OF INDUCTIVE
LOAD
DESCRIPTION
The VN20AN is a monolithic device made using
SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit. The diagnostic
output indicates an over temperature status.
Fast turn-off of inductive load is achieved by
negative (-18V) load voltage at turn-off.
BLOCK DIAGRAM
PENTAWATT
(vertical)
PENTAWATT
(horizontal)
PENTAWATT
(in-line)
ORDER CODES:
PENTAWATT vertical VN20AN
PENTAWATT horizontal VN20AN (011Y)
PENTAWATT in-line
VN20AN (012Y)
September 1994
1/11
1 page  
VN20AN
FUNCTIONAL DESCRIPTION
The device has a diagnistic output which
indicates over temperature conditions.
The truth table shows input, diagnostic output
status and output voltage level in normal
operation and fault conditions. The output signals
are processed by internal logic.
To protect the device against short circuit and
over current conditions, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140 oC. When the
temperature returns to 125 oC the switch is
automatically turned on again. To ensure the
protection in all VCC conditions and in all the
junction temperature range it is necessary to limit
the voltage drop across Drain and Source (pin 3
and 5) at 28V accordinf to:
Vds = VCC - IOV * (Ri + Rw + Rl)
where:
Ri = internal resistence of Power Supply
Rw = Wires resistance
Rl = Short Circuit resistance
Driving inductive loads, an internal function of the
device ensures the fast demagnetization with
typical voltage (Vdemag) of -18V.
This function allows the reduction of the power
dissipation according to the formula:
Pdem = 0.5 * Lload * (Iload)2 * [(VCC + Vdem)/Vdem] * f
where f = Switcning Frequency
Based on this formula it is possible to know the
value of inductance and/or current to avoid a
thermal shut-down.
PROTECTING THE DEVICE AGAINST REVER-
SE BATTERY
The simpliest way to protect the device against a
continuous reverse battery voltage (-36V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(Fig. 3). The consequences of the voltage drop
across this diode are as follows:
If the input is pulled to power GND, a negative
voltage of -Vf is seen by the device. (Vil, Vih
thresholds and Vstat are increased by Vf with
respect to power GND).
The undervoltage shut-down level is increased by
Vf.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board avoiding shift of Vih, Vil and Vstat. This
solution allows the use of a standard diode.
Over Current Test Circuit
5/11
5 Page 
VN20AN
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
11/11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet VN20AN.PDF ] | |
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| VN20AN011Y | HIGH SIDE SMART POWER SOLID STATE RELAY | STMicroelectronics |
| VN20AN012Y | HIGH SIDE SMART POWER SOLID STATE RELAY | STMicroelectronics |
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