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PDF VN10LP Data sheet ( Hoja de datos )
| Número de pieza | VN10LP | |
| Descripción | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – FEB 94
FEATURES
* 60 Volt VDS
* RDS(on)=5Ω
VN10LP
REFER TO ZVN3306A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb = 25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at Tamb = 25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
D
G
S
E-Line
TO92 Compatible
VALUE
60
270
3
± 20
625
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
60
V ID=100µA, VGS=0V
Gate-Source
Breakdown Voltage
VGS(th)
0.8
2.5 V
ID=1mA, VDS= VGS
Gate Body Leakage
Zero Gate Voltage
Drain Current (1)
IGSS
IDSS
100 nA
10 µA
VGS=± 20V, VDS=0V
VDS=60 V, VGS=0V
On State Drain
Current(1)
ID(on)
750
mA VDS=15 V, VGS=10V
Static Drain Source On RDS(on)
State Resistance (1)
Forward
Transconductance
(1)(2)
gfs
100
5.0 Ω
7.5 Ω
VGS=10V,ID=500mA
VGS=5V, ID=200mA
mS VDS=15V,ID=500mA
Input Capacitance (2)
Common Source
Output Capacitance (2)
Ciss
Coss
60 pF
25 pF VDS=25 V, VGS=0V
f=1MHz
Reverse Transfer
Capacitance (2)
Crss
5 pF
Turn-On Time (2)(3)
Turn-Off Time (2)(3)
t(on)
t(off)
10 ns VDD ≈15V, ID=600mA
10 ns
3-90
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet VN10LP.PDF ] | |
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