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PDF VN02ANSP Data sheet ( Hoja de datos )
| Número de pieza | VN02ANSP | |
| Descripción | HIGH SIDE SMART POWER SOLID STATE RELAY | |
| Fabricantes | STMicroelectronics | |
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® VN02ANSP
HIGH SIDE SMART POWER SOLID STATE RELAY
TYPE
V N02 AN S P
VDSS
60 V
RDS( o n)
0.35 Ω
IOUT
7A
VCC
36 V
s OUTPUT CURRENT (CONTINUOUS):
7A @ Tc=25oC
s LOGIC LEVEL 5V COMPATIBLE INPUT
s THERMAL SHUT-DOWN
s UNDER VOLTAGE PROTECTION
s OPEN DRAIN DIAGNOSTIC OUTPUT
s FAST DEMAGNETIZATION OF INDUCTIVE
LOAD
DESCRIPTION
The VN02ANSP is a monolithic device made
using STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit. The diagDnaotastSicheet4U.com
output indicates an over temperature status.
Fast turn-off of inductive load is achieved by
negative (-18 V) load voltage at turn-off.
BLOCK DIAGRAM
10
1
PowerSO-10TM
DataShee
July 1998
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et4U.com
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which where f = Switching Frequency
indicates over temperature conditions.
Based on this formula it is possible to know the
The truth table shows input, diagnostic output value of inductance and/or current to avoid a
status and output voltage level in normal thermal shut-down.
operation and fault conditions. The output signals
are processed by internal logic.
PROTECTING THE DEVICE AGAINST RE-
To protect the device against short circuit and VERSE BATTERY
over current conditions, the thermal protection
turns the integrated Power MOS off at a minimum
The simpliest way to protect the device against a
continuous reverse battery voltage (-36V) is to
junction temperature of 140 oC. When the insert a Schottky diode between pin 1 (GND) and
temperature returns to 125 oC the switch is
automatically turned on again. To ensure the
ground, as shown in the typical application circuit
(Fig. 3). The consequences of the voltage drop
protection in all VCC conditions and in all the across this diode are as follows:
junction temperature range it is necessary to limit If the input is pulled to power GND, a negative
the voltage drop across Drain and Source (pin 3 voltage of -Vf is seen by the device. (Vil, Vih
and 5) at 28V according to:
thresholds and Vstat are increased by Vf with
Vds = VCC - IOV * (Ri + Rw + Rl)
respect to power GND).
where:
The undervoltage shut-down level is increased by
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This function allows the reduction of the power
dissipation according to the formula:
Pdem = 0.5 * Lload * (Iload)2 * [(VCC + Vdem)/Vdem] * f
board avoiding shift of Vih, Vil and Vstat. This
solution allows the use of a standard diode.
Figure 2: Over Current Test Circuit
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet VN02ANSP.PDF ] | |
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