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PDF VMO580-02F Data sheet ( Hoja de datos )
| Número de pieza | VMO580-02F | |
| Descripción | HipPerFETTM Module | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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HipPerFETTM Module
N-Channel Enhancement Mode
VMO 580-02F VDSS = 200 V
ID25 = 580 A
RDS(on) = 3.8 mΩ
D
G
KS S
S
D
G
KS
Preliminary Data
MOSFET
Symbol
VDSS
VGS
ID25
ID80
IF25
IF80
Symbol
RDSon
VGSth
I
DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VF
trr
RthJC
R
thJS
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 80°C
(diode) TC = 25°C
(diode) TC = 80°C
Maximum Ratings
200 V
±20 V
580 A
430 A
580 A
430 A
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V; ID = ID80
VDS = 20 V; ID = 50 mA
V
DS
=
0.8
•
V;
DSS
V
GS
=
0
V;
TVJ
=
25°C
TVJ = 125°C
VGS = ±20 V; VDS = 0 V
VGS= 10 V; VDS = 0.5 • VDSS; ID = ID80
3.2
2
3
2750
500
1350
3.8 mΩ
4V
2.6 mA
mA
1 µA
nC
nC
nC
VGS= 10 V; VDS = 0.5 • VDSS;
ID = ID80; RG = 1 Ω
210 ns
500 ns
900 ns
350 ns
(diode) IF = 300 A; VGS = 0 V
(diode) IF = 300 A; -di/dt = 500 A/µs; VDS = ½ VDSS
0.9
300
with heat transfer paste
0.07
1.1 V
ns
0.05 K/W
K/W
Features
• HiPerFETTM technology
- low RDSon
- dv/dt ruggedness
- fast intrinsic reverse diode
• package
- low inductive current path
- screw connection to high current
main terminals
- use of non interchangeable
connectors for auxiliary terminals
possible
- Kelvin source terminals for easy drive
- isolated ceramic base plate
Applications
• converters with high power density for
- main and auxiliary AC drives of
electric vehicles
- DC drives
- power supplies
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
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