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Número de pieza | IRFBA1404 | |
Descripción | Power MOSFET(Vdss=40V/ Rds(on)=3.7mohm/ Id=206A) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRFBA1404 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! PD - 93806
AUTOMOTIVE MOSFET IRFBA1404P
Typical Applications
l Anti-lock Braking Systems (ABS)
l Electric Power Steering (EPS)
l Electric Braking
l Radiator Fan Control
Benefits
l Advanced Process Technology
l Ultra Low On-Resistance
l Increase Current Handling Capability
G
l 175°C Operating Temperature
l Fast Switching
l Dynamic dv/dt Rating
l Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFETs utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this MOSFET are a 175oC junction operating
temperature, fast switching speed and improved ruggedness in
single and repetitive avalanche. The Super-220 TM is a package that
has been designed to have the same mechanical outline and pinout
as the industry standard TO-220 but can house a considerably
larger silicon die. The result is significantly increased current
handling capability over both the TO-220 and the much larger TO-
247 package. The combination of extremely low on-resistance
silicon and the Super-220 TM package makes it ideal to reduce the
component count in multiparalled TO-220 applications, reduce
system power dissipation, upgrade existing designs or have TO-247
performance in a TO-220 outline. This package has been designed
to meet automotive, Q101, qualification standard.
These benefits make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
www.irf.com
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
HEXFET® Power MOSFET
D VDSS = 40V
RDS(on) = 3.7mΩ
ID = 206A
S
Super-220™
Max.
206
145
650
300
2.0
± 20
See Fig.12a, 12b, 15, 16
30
5.0
-40 to + 175
-55 to + 175
300 (1.6mm from case )
20
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
N
1
10/24/00
1 page IRFBA1404P
240
LIMITED BY PACKAGE
180
120
60
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
0.1
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IRFBA1404.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFBA1404 | Power MOSFET(Vdss=40V/ Rds(on)=3.7mohm/ Id=206A) | International Rectifier |
IRFBA1404P | Power MOSFET(Vdss=40V/ Rds(on)=3.7mohm/ Id=206A) | International Rectifier |
IRFBA1404PPBF | Power MOSFET ( Transistor ) | International Rectifier |
IRFBA1405 | Power MOSFET(Vdss=55V/ Rds(on)=5.0mohm/ Id=174A) | International Rectifier |
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