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Datasheet IRF5803 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1IRF5803Power MOSFET(Vdss=-40V)

PD-94015 IRF5803 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS -40V RDS(on) max (mΩ) 112@VGS = -10V 190@VGS = -4.5V ID -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from International Rect
International Rectifier
International Rectifier
mosfet
2IRF5803D2FETKY MOSFET & Schottky Diode(Vdss=-40V/ Rds(on)=112ohm)

PD- 94016 IRF5803D2 FETKY MOSFET & Schottky Diode l l l l l TM Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier SO-8 Footprint A A S G 1 8 K K D D VDSS = -40V RDS(on) = 112mΩ Schottky Vf = 0.51V 2 7
International Rectifier
International Rectifier
mosfet
3IRF5803D2PbFPower MOSFET & Schottky Diode

PD- 95160A IRF5803D2PbF l l l l l l Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier SO-8 Footprint Lead-Free FETKY MOSFET & Schottky Diode A A S G 1 8 TM K K D D VDSS = -40V RDS(on) = 112mΩ Schottky Vf =
International Rectifier
International Rectifier
mosfet
4IRF5803PbFPower MOSFET, Transistor

PD-95262B IRF5803PbF HEXFET® Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free D D VDSS -40V RDS(on) max (mW) 112@VGS = -10V 190@VGS = -4.5V ID -3.4A -2.7A Description These P-channel HEXFET® Powe
International Rectifier
International Rectifier
mosfet


IRF Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1IRF-182xxInductors

w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale • Flame-retardant coating and color band identification.
Vishay Intertechnology
Vishay Intertechnology
inductor
2IRF-46Inductors Epoxy Conformal Coated

IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES • Axial lead type, small lightweight design • Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS • Treated with epoxy resin coating for humidity COMPLIANT resi
Vishay Siliconix
Vishay Siliconix
inductor
3IRF034N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF034 DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power supp
Inchange Semiconductor
Inchange Semiconductor
mosfet
4IRF034REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

PD - 90585 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF034   IRF034 60V, N-CHANNEL BVDSS RDS(on) 60V 0.050Ω ID 25Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transi
International Rectifier
International Rectifier
transistor
5IRF044N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF044 DESCRIPTION ·Drain Current ID=44A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power sup
Inchange Semiconductor
Inchange Semiconductor
mosfet
6IRF044N-CHANNEL POWER MOSFET

IRF044 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE 7.87 (0.310) 6.99 (0.275) 1 20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.07
Seme LAB
Seme LAB
mosfet
7IRF044REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE

PD - 90584 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF044 BVDSS 60V RDS(on) 0.028 Ω ID 44Α  IRF044 60V, N-CHANNEL The HEXFET technology is the key to International Rectifier’s advanced line of
International Rectifier
International Rectifier
transistor



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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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