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Número de pieza | IRF122 | |
Descripción | 8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRF122 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Semiconductor
October 1997
IRF120, IRF121,
IRF122, IRF123
8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm,
N-Channel, Power MOSFETs
Features
• 8.0A and 9.2A, 80V and 100V
• rDS(ON) = 0.27Ω and 0.36Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF120
TO-204AA
IRF120
IRF121
TO-204AA
IRF121
IRF122
TO-204AA
IRF122
IRF123
TO-204AA
IRF123
NOTE: When ordering, use the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA09594.
Symbol
D
G
S
Packaging
JEDEC TO-204AA
DRAIN
(FLANGE)
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
2-1
File Number 1565.2
1 page IRF120, IRF121, IRF122, IRF123
Typical Performance Curves Unless Otherwise Specified (Continued)
15
80µs PULSE TEST
12
9
6
VGS = 10V
VGS = 8V
VGS = 7V
VGS = 6V
VGS = 5V
3
VGS = 4V
0
0 1.0 2.0 3.0 4.0 5.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
100
VDS ≥ 50V
80µs PULSE TEST
10
1 TJ = 175oC
TJ = 25oC
0.1
0
24 6 8
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
10
2.5
80µs PULSE TEST
2.0
1.5
1.0
VGS = 10V
3.0
ID = 9.2A
VGS = 10V
2.4
1.8
1.2
0.5
0
0
VGS = 20V
8 16 24
ID, DRAIN CURRENT (A)
32
40
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0.6
0.0
-60
0 60 120
TJ, JUNCTION TEMPERATURE (oC)
180
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-60
0 60 120
TJ, JUNCTION TEMPERATURE (oC)
180
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1000
800
600
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGS
400 CISS
200
0
1
COSS
CRSS
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
2-5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet IRF122.PDF ] |
Número de pieza | Descripción | Fabricantes |
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