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Datasheet SC-89 PDF ( 特性, スペック, ピン接続図 )

部品番号 SC-89
部品説明 P-Channel 1.8-V (G-S) MOSFET
メーカ Vishay Siliconix
ロゴ Vishay Siliconix ロゴ 
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SC-89 Datasheet, SC-89 PDF,ピン配置, 機能
New Product
Si1013R/X
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
1.2 @ VGS = –4.5 V
–20 1.6 @ VGS = –2.5 V
2.7 @ VGS = –1.8 V
ID (mA)
–350
–300
–150
FEATURES
D High-Side Switching
D Low On-Resistance: 1.2 W
D Low Threshold: 0.8 V (typ)
D Fast Swtiching Speed: 14 ns
D 1.8-V Operation
D Gate-Source ESD Protection
BENEFITS
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
SC-75A or SC-89
G1
S2
3D
Ordering Information:
SC-75A (SOT– 416):
Si1013R–Marking Code : D
SC-89 (SOT– 490):
Si1013X–Marking Code: B
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta
Continuous Source Current (diode conduction)b
Maximum Power Dissipationb for SC-75
Maximum Power Dissipationb for SC-89
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
ESD
–20
–400
"6
–350
–300
–275
175
90
275
160
–275
–1000
–250
150
80
250
140
–55 to 150
2000
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board.
Document Number: 71167
S-02464—Rev. A, 25-Oct-00
Unit
V
mA
mW
_C
V
www.vishay.com
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SC-89 pdf, ピン配列
New Product
Si1013R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
On-Resistance vs. Drain Current
4.0
120
Capacitance
3.2
VGS = 1.8 V
2.4
VGS = 2.5 V
1.6
VGS = 4.5 V
0.8
0.0
0
200 400 600 800
ID Drain Current (mA)
Gate Charge
5
VDS = 10 V
ID = 250 mA
4
1000
3
2
100
80 Ciss
60
40
Coss
20
Crss
0
0
4
8 12 16 20
VDS Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
1.4
VGS = 4.5 V
ID = 350 mA
1.2
VGS = 1.8 V
1.0 ID = 150 mA
1 0.8
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Qg Total Gate Charge (nC)
1000
Source-Drain Diode Forward Voltage
TJ = 125_C
100
TJ = 25_C
10
TJ = 55_C
0.6
50
25 0
25 50 75 100
TJ Junction Temperature (_C)
125
On-Resistance vs. Gate-to-Source Voltage
5
4
3
2
ID = 200 mA
1
ID = 350 mA
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD Source-to-Drain Voltage (V)
Document Number: 71167
S-02464Rev. A, 25-Oct-00
0
0123456
VGS Gate-to-Source Voltage (V)
www.vishay.com
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