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SBL10L25 の電気的特性と機能

SBL10L25のメーカーはVishay Siliconixです、この部品の機能は「Low VF Schottky Barrier Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 SBL10L25
部品説明 Low VF Schottky Barrier Rectifier
メーカ Vishay Siliconix
ロゴ Vishay Siliconix ロゴ 




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SBL10L25 Datasheet, SBL10L25 PDF,ピン配置, 機能
www.vishay.com
SBL10L25, SBLF10L25, SBLB10L25
Vishay General Semiconductor
Low VF Schottky Barrier Rectifier
TO-220AC
ITO-220AC
SBL10L25
PIN 1
PIN 2
CASE
2
1
TO-263AB
K
2
1
SBLF10L25
PIN 1
PIN 2
FEATURES
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Very low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC and ITO-220AC package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
1
SBLB10L25
PIN 1
2
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ max.
10 A
25 V
240 A
0.35 V
150 °C
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters and polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
VRRM
Working peak reverse voltage
VRWM
Maximum DC blocking voltage
Maximum average forward rectified current at TC = 135 °C
VDC
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Peak repetitive reverse surge current at tp = 2.0 µs, 1 kHz
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
IRRM
dV/dt
TJ, TSTG
VAC
SBL10L25
25
18
25
10
240
1.0
10 000
- 65 to + 150
1500
UNIT
V
A
V/μs
°C
V
Revision: 14-Jun-12
1 Document Number: 88723
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





SBL10L25 pdf, ピン配列
www.vishay.com
SBL10L25, SBLF10L25, SBLB10L25
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12.5
10
7.5
5
2.5
0
50 100 150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
10 000
1000
100
10
1
10 100
Reverse Voltage (V)
Fig. 4 - Typical Junction Capacitance
100
TJ = 175 °C
10
TJ = 150 °C
1 TJ = 25 °C
TJ = 100 °C
0.1
TJ = 125 °C
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6
Instantaneous Forward Voltage (V)
0.7
Fig. 2 - Typical Instantaneous Forward Characteristics
1000
100 TJ = 150 °C
TJ = 125 °C
10
TJ = 100 °C
1.0
0.1
0.01
0
TJ = 25 °C
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Typical Reverse Characteristics
100
10
1
0.1
0.01
0.1 1
t - Pulse Duration (s)
10
Fig. 5 - Typical Transient Thermal Impedance
Revision: 14-Jun-12
3 Document Number: 88723
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


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部品番号部品説明メーカ
SBL10L25

Low VF Schottky Barrier Rectifier

Vishay Siliconix
Vishay Siliconix


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