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PDF SB85 Data sheet ( Hoja de datos )

Número de pieza SB85
Descripción SILICON SCHOTTKY DETECTING DIODE
Fabricantes Shanghai Sunrise Electronics 
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No Preview Available ! SB85 Hoja de datos, Descripción, Manual

SHANGHAI SUNRISE ELECTRONICS CO., LTD.
SB85
SILICON SCHOTTKY
DETECTING DIODE
REVERSE VOLTAGE: 50V
FORWARD CURRENT: 150mA
TECHNICAL
SPECIFICATION
FEATURES
• Small glass structure ensures high reliability
• Fast switching
• Low leakage
• High temperature soldering guaranteed:
250oC/10S/9.5mm lead length
at 5 lbs tension
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Glass,hermetically sealed
• Polarity: Color band denotes cathode
• Mounting position: Any
DO - 34
DO - 35
1.0 (25.4)
MIN.
.085 (2.2)
.120 (3.0)
1.0 (25.4)
MIN.
.050 (1.27)
.075 (1.91) DIA.
.120 (3.0)
.200 (5.1)
.060 (1.5)
.090 (2.3) DIA.
1.0 (25.4)
MIN.
.018 (0.46)
.022 (0.56) DIA.
1.0 (25.4)
MIN.
.018 (0.46)
.022 (0.56) DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25oC ambient temperature unless otherwise specified)
RATINGS
SYMBOL
Reverse Voltage
Forward Current (peak)
Forward Current (D.C.)
Forward Voltage (D.C.)
Reverse Current (VR=30V)
Capacitance
IF=10mA
IF=100mA
(Note 1)
VR
IFM
IF
VF1
VF2
IR
Ct
Detection Effectiveness
(Note 2)
Operating Junction and Storage
Temperature Range
TJ,TSTG
Notes:
1. VR=10V, f=1MHz
2. Vm=3V(peak), f=30MHz, RL=3.9K, Ct=10pF.
Typ.
6
60%
VALUE
Max.
50
150
30
0.4
0.8
3
-55 +125
UNITS
V
mA
mA
V
V
µA
pF
oC
http://www.sse-diode.com

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