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Número de pieza | SI5935DC | |
Descripción | Dual P-Channel 1.8-V (G-S) MOSFET | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
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Si5935DC
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.086 @ VGS = - 4.5 V
- 20 0.121 @ VGS = - 2.5 V
0.171 @ VGS = - 1.8 V
1206-8 ChipFETr
1
S1
D1 G1
D1 S2
D2 G2
D2
Bottom View
Ordering Information: Si5935DC-T1
ID (A)
- 4.1
- 3.4
- 2.9
FEATURES
D TrenchFETr Power MOSFETS
D Low rDS(on) Dual and Excellent Power
Handling In A Compact Footprint
APPLICATIONS
D Load Switch
D PA Switch
D Battery Switch
S1
S2
G1 G2
Marking Code
DF XX
Lot Traceability
and Date Code
Part # Code
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
- 20
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
- 4.1 - 3
- 2.9 - 2.2
- 15
- 1.8 - 0.9
2.1 1.1
1.1 0.6
- 55 to 150
260
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
RthJA
RthJF
50
90
30
60
110 _C/W
40
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72220
S-31260—Rev. A, 16-Jun-03
www.vishay.com
1
1 page New Product
Si5935DC
Vishay Siliconix 1000
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72220
S-31260—Rev. A, 16-Jun-03
www.vishay.com
5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet SI5935DC.PDF ] |
Número de pieza | Descripción | Fabricantes |
SI5935DC | Dual P-Channel 1.8-V (G-S) MOSFET | Vishay Siliconix |
SI5935DC-T1 | Dual P-Channel 1.8-V (G-S) MOSFET | Vishay Siliconix |
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