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PDF SI5445DC-T1 Data sheet ( Hoja de datos )
| Número de pieza | SI5445DC-T1 | |
| Descripción | P-Channel 1.8-V (G-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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P-Channel 1.8-V (G-S) MOSFET
Si5445DC
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.035 @ VGS = --4.5 V
--8 0.047 @ VGS = --2.5 V
0.062 @ VGS = --1.8 V
ID (A)
7.1
6.2
5.7
1206-8 ChipFETt
1
D
D
D
D
D
D
S
G
Bottom View
Ordering Information: Si5445DC-T1
S
Marking Code
BC XX
Lot Traceability
and Date Code
Part # Code
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
--8
8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Currenta
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
7.1
5.2
5.2
--2.1
20
3.7
--1.1
2.5 1.3
1.3 0.7
--55 to 150
260
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t ≤ 5 sec
Steady State
Steady State
RthJA
RthJF
40
80
15
50
95 _C/W
20
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71063
S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-1
1 page | ||
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| PDF Descargar | [ Datasheet SI5445DC-T1.PDF ] | |
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| SI5445DC-T1 | P-Channel 1.8-V (G-S) MOSFET | Vishay Siliconix |
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