(PDF) SI2308DS Datasheet - N-Channel 60-V (D-S) MOSFET

Número de pieza	SI2308DS
Descripción	N-Channel 60-V (D-S) MOSFET
Fabricantes	Vishay Siliconix
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No Preview Available ! N-Channel 60-V (D-S) MOSFET Si2308DS Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (W) 60 0.16 @ VGS = 10 V 0.22 @ VGS = 4.5 V ID (A) 2.0 1.7 FEATURES D 100% Rg Tested TO-236 (SOT-23) G1 S2 3D Top View Si2308DS (A8)* *Marking Code Ordering Information: Si2308DS-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS VGS 60 "20 Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg 2.0 1.6 10 1.0 1.25 0.80 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta Maximum Junction-to-Ambientc RthJA Notes a. Surface Mounted on FR4 Board, t = v5 sec. b. Pulse width limited by maximum junction temperature. c. Surface Mounted on FR4 Board For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70797 S-31725—Rev. B, 18-Aug-03 Maximum 100 166 Unit _C/W www.vishay.com 1 1 page

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PDF SI2308DS Data sheet ( Hoja de datos )