(PDF) SI2306DS Datasheet - N-Channel 30-V (D-S) MOSFET

Número de pieza	SI2306DS
Descripción	N-Channel 30-V (D-S) MOSFET
Fabricantes	Vishay Siliconix
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No Preview Available ! N-Channel 30-V (D-S) MOSFET Si2306DS Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 0.057 @ VGS = 10 V 0.094 @ VGS = 4.5 V - ID (A) 3.5 2.8 FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested TO-236 (SOT-23) G1 S2 3D Top View Si2306DS (A6)* *Marking Code Ordering Information: Si2306DS-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS VGS 30 "20 Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg 3.5 2.8 16 1.25 1.25 0.80 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board. b. t v 5 sec. Document Number: 70827 S-31873—Rev. C, 15-Sep-03 t v 5 sec Steady State Symbol RthJA Typical 130 Maximum 100 Unit _C/W www.vishay.com 1 1 page

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PDF SI2306DS Data sheet ( Hoja de datos )