(PDF) SI2301DS Datasheet - P-Channel 1.25-W/ 2.5-V MOSFET

Número de pieza	SI2301DS
Descripción	P-Channel 1.25-W/ 2.5-V MOSFET
Fabricantes	Vishay Siliconix
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No Preview Available ! Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.130 @ VGS = - 4.5 V - 20 0.190 @ VGS = - 2.5 V ID (A) - 2.3 - 1.9 TO-236 (SOT-23) G1 S2 3D Top View Si2301DS (A1)* *Marking Code Ordering Information: Si2301DS-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C VDS VGS ID IDM IS PD TJ, Tstg - 20 "8 - 2.3 - 1.5 - 10 - 1.6 1.25 0.8 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc RthJA Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70627 S-31990—Rev. E, 13-Oct-03 Limit 100 166 Unit _C/W www.vishay.com 1 1 page

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PDF SI2301DS Data sheet ( Hoja de datos )