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PDF SI1029X Data sheet ( Hoja de datos )
| Número de pieza | SI1029X | |
| Descripción | Complementary N- and P-Channel 60-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si1029X
Vishay Siliconix
Complementary N- and P-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
N-Channel
1.40 at VGS = 10 V
60
3 at VGS = 4.5 V
4 at VGS = - 10 V
P-Channel
- 60
8 at VGS = - 4.5 V
ID (mA)
500
200
- 500
- 25
S1 1
G1 2
SC-89
6 D1
5 G2
Marking Code: H
D2 3
4 S2
Top View
Ordering Information: Si1029X-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Very Small Footprint
• High-Side Switching
• Low On-Resistance:
N-Channel, 1.40
P-Channel, 4
• Low Threshold: ± 2 V (typ.)
• Fast Switching Speed: 15 ns (typ.)
• Gate-Source ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
APPLICATIONS
• Replace Digital Transistor, Level-Shifter
• Battery Operated Systems
• Power Supply Converter Circuits
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
N-Channel
P-Channel
Parameter
Symbol
5 s Steady State 5 s Steady State
Drain-Source Voltage
VDS 60
- 60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
ID
320
230
305
- 200
- 190
220
- 145
- 135
Pulsed Drain Currentb
IDM 650
- 650
Continuous Source Current (Diode Conduction)a
IS 450
380
- 450
- 380
Maximum Power Dissipationa
TA = 25 °C
TA = 85 °C
PD
280
145
250
130
280
145
250
130
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Unit
V
mA
mW
°C
V
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
www.vishay.com
1
1 page  
Si1029X
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1.0
VGS = 10 V
7V
0.8 8 V
0.6 6 V
0.4
5V
0.2
4V
1200
900
600
300
TJ = - 55 °C
25 °C
125 °C
0.0
0
1234
VDS - Drain-to-Source Voltage (V)
Output Characteristics
5
0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
20
16 VGS = 4.5 V
12
VGS = 5 V
8
VGS = 10 V
4
40
VGS = 0 V
32
Ciss
24
16
Coss
8 Crss
0
0 200 400 600 800 1000
I D - Drain Current (mA)
On-Resistance vs. Drain Current
15
ID = 500 mA
12
VDS = 30 V
9
VDS = 48 V
6
3
0
0
1.8
1.5
1.2
0.9
0.6
0.3
5 10 15 20
VDS - Drain-to-Source Voltage (V)
Capacitance
25
VGS = 10 V at 500 mA
VGS = 4.5 V at 25 mA
0
0.0 0.3 0.6 0.9 1.2 1.5 1.8
Qg - Total Gate Charge (nC)
Gate Charge
0.0
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
www.vishay.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SI1029X.PDF ] | |
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