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PDF SI1016X Data sheet ( Hoja de datos )
| Número de pieza | SI1016X | |
| Descripción | Complementary N and P-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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New Product
Si1016X
Vishay Siliconix
Complementary N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
–20
rDS(on) (W)
0.70 @ VGS = 4.5 V
0.85 @ VGS = 2.5 V
1.25 @ VGS = 1.8 V
1.2 @ VGS = –4.5 V
1.6 @ VGS = –2.5 V
2.7 @ VGS = –1.8 V
ID (mA)
600
500
350
–400
–300
–150
FEATURES
D Very Small Footprint
D High-Side Switching
D Low On-Resistance:
N-Channel, 0.7 W
P-Channel, 1.2 W
D Low Threshold: "0.8 V (typ)
D Fast Swtiching Speed: 14 ns
D 1.8-V Operation
D Gate-Source ESD Protection
BENEFITS
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
APPLICATIONS
D Replace Digital Transistor, Level-Shifter
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
S1 1
SOT-563
SC-89
6 D1
G1 2
5 G2
Marking Code: A
D2 3
4 S2
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol 5 secs Steady State 5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Currentb
TA = 25_C
TA = 85_C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 85_C
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
ESD
20 –20
"6
515
485
–390
–370
370
350
–280
–265
650 –650
450
380
–450
–380
280 250 280 250
145 130 145 130
–55 to 150
2000
Unit
V
mA
mW
_C
V
Notes
a. Surface Mounted on FR4 Board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71168
S-03104—Rev. A, 08-Feb-01
www.vishay.com
1
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Si1016X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
1.0
VGS = 5 thru 3 V
0.8
Output Characteristics
2.5 V
1000
800
PĆCHANNEL
Transfer Characteristics
TJ = –55_C
25_C
0.6 600 125_C
2V
0.4 400
1.8 V
0.2 200
0.0
0.0
4.0
3.2
0.5 1.0 1.5 2.0 2.5
VDS – Drain-to-Source Voltage (V)
3.0
On-Resistance vs. Drain Current
VGS = 1.8 V
2.4
VGS = 2.5 V
1.6
VGS = 4.5 V
0.8
0.0
0
5
4
200 400 600 800
ID – Drain Current (mA)
Gate Charge
VDS = 10 V
ID = 250 mA
1000
3
2
0
0.0 0.5 1.0 1.5 2.0
VGS – Gate-to-Source Voltage (V)
2.5
Capacitance
120
VGS = 0 V
f = 1 MHz
100
80 Ciss
3.0
60
40
Coss
20
Crss
0
0
4
8 12 16 20
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
1.4
VGS = 4.5 V
ID = 350 mA
1.2
VGS = 1.8 V
1.0 ID = 150 mA
1 0.8
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Qg – Total Gate Charge (nC)
Document Number: 71168
S-03104—Rev. A, 08-Feb-01
0.6
–50
–25 0
25 50 75 100
TJ – Junction Temperature (_C)
125
www.vishay.com
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SI1016X.PDF ] | |
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