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PDF SKM200GB124 Data sheet ( Hoja de datos )
| Número de pieza | SKM200GB124 | |
| Descripción | Low Loss IGBT Modules | |
| Fabricantes | ETC | |
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Absolute Maximum Ratings
Symbol Conditions 1)
VCES
VCGR
IC
ICM
VGES
Ptot
Tj, (Tstg)
Visol
humidity
climate
RGE = 20 kΩ
Tcase = 25/85 °C
Tcase = 25/85 °C; tp = 1 ms
per IGBT, Tcase = 25 °C
AC, 1 min.
DIN 40040
DIN IEC 68 T.1
Inverse Diode
IF = –IC Tcase = 25/80 °C
IFM = –ICM Tcase = 25/80 °C; tp = 1 ms
IFSM tp = 10 ms; sin.; Tj = 150 °C
I2t tp = 10 ms; Tj = 150 °C
Characteristics
Symbol Conditions 1)
V(BR)CES
VGE(th)
ICES
IGES
VCEsat
VCEsat
gfs
VGE = 0, IC = 4 mA
VGE = VCE, IC = 6 mA
VGE = 0
Tj = 25 °C
VCE = VCES Tj = 125 °C
VGE = 20 V, VCE = 0
IC = 150 A VGE = 15 V;
IC = 200 A Tj = 25 (125) °C
VCE = 20 V, IC = 150 A
CCHC
Cies
Coes
Cres
LCE
per IGBT
VGE = 0
VCE = 25 V
f = 1 MHz
td(on)
tr
td(off)
tf
Eon
Eoff
VCC = 600 V
VGE = –15 V / +15 V3)
IC = 150 A, ind. load
RGon = RGoff = 7Ω
Tj = 125 °C
Inverse Diode 8)
VF = VEC
VF = VEC
VTO
rt
IRRM
Qrr
IF = 150 A VGE = 0 V;
IF = 200 A Tj = 25 (125) °C
Tj = 125 °C 2)
Tj = 125 °C 2)
IF = 150 A; Tj = 125 °C2)
IF = 150 A; Tj = 125 °C2)
Thermal characteristics
Rthjc
Rthjc
Rthch
per IGBT
per diode
per module
© by SEMIKRON
Values
1200
1200
290 / 200
580 / 400
± 20
1350
–40 ... +150 (125)
2500
Class F
40/125/56
195 / 130
580 / 400
1450
10 500
Units
V
V
A
A
V
W
°C
V
SEMITRANS® M
Low Loss IGBT Modules
SKM 200 GB 124 D
A
A
A
A2s SEMITRANS 3
min.
≥ VCES
4,5
–
–
–
–
–
62
–
–
–
–
–
–
–
–
–
–
–
typ.
–
5,5
0,4
12
–
2,1(2,4)
2,5(3,0)
–
–
11
1,6
0,8
–
75
50
520
50
21
19
max. Units
–
6,5
14
–
0,32
2,45(2,85)
–
–
V
V
mA
mA
µA
V
V
S
700 pF
15 nF
2 nF
1 nF
20 nH
– ns
– ns
– ns
– ns
– mWs
– mWs
– 2,0(1,8)
– 2,25(2,05)
– 1,1
––
– 78
– 19,5
2,5
–
1,2
7
–
–
V
V
V
mΩ
A
µC
– – 0,09 °C/W
– – 0,25 °C/W
– – 0,038 °C/W
GB
Features
• MOS input (voltage controlled)
• N channel, homogeneous Silicon
structure NPT-IGBT (Non punch
through)
• Low saturation voltage
• Low inductance case
• Low tail current with low
temperature dependence
• High short circuit capability,
self limiting to 6 * Icnom
• Latch-up free
• Fast & soft inverse CAL diodes 8)
• Isolated copper baseplate using
DCB Direct Copper Bonding
Technology without hard mould
• Large clearance (12 mm) and
creepage distances (20 mm)
Typical Applications → B 6 – 161
• Switching (not for linear use)
• Inverter drives
• UPS
1) Tcase = 25 °C, unless otherwise
specified
2) IF = – IC, VR = 600 V,
–diF/dt = 1500 A/µs, VGE = 0 V
3) Use VGEoff = –5... –15 V
8) CAL = Controlled Axial Lifetime
Technology
0898
Cases and mech. data
→ B 6 – 162
B 6 – 157
1 page  
1
K/W
0,1
M 20 0G1 24 .X LS -1 9
1
K/W
0,1
M2 0 0G1 24 .X LS -2 0
0,01
0,001
ZthJC
single pulse
0,0001
0,00001 0,0001
tp
0,001
0,01
D=0,50
0,20
0,10
0,05
0,02
0,01
0,1 1
s
0,01
0,001
ZthJC
single pulse
0,0001
0,00001 0,0001
tp
0,001
D=0,5
0,2
0,1
0,05
0,02
0,01
0,01
0,1 1
s
Fig. 19 Transient thermal impedance of IGBT
ZthJC = f (tp); D = tp / tc = tp · f
Fig. 20 Transient thermal impedance of
inverse CAL diodes ZthJC = f (tp); D = tp / tc = tp · f
280
A
240
200
160
M200G124.X LS-22
RG=
4Ω
VCC = 600 V
Tj = 125 °C
VGE = ± 15 V
6Ω
280
A
240
200
160
M200G124.X LS -23
RG= 4 Ω
6Ω
VCC = 600 V
Tj = 125 °C
VGE = ± 15 V
IF = 150 A
120
10 Ω
80 17 Ω
40 Ω
40
IRR
0
0 40
IF
80 120 160 200 240
A
Fig. 22 Typ. CAL diode peak reverse recovery
current IRR = f (IF; RG)
Typical Applications
include
Switched mode power supplies
DC servo and robot drives
Inverters
DC choppers
AC motor speed control
UPS Uninterruptable power supplies
General power switching applications
Electronic (also portable) welders
120 10 Ω
17 Ω
80
40 Ω
40
IRR
0
0 1000
diF/dt
2000
3000
4000
5000
6000 7000
A/µs
Fig. 23 Typ. CAL diode peak reverse recovery
current IRR = f (di/dt)
35
µC
30
25 10 Ω
17 Ω
20 40 Ω
M2 0 0G1 24 .X LS -2 4
6 Ω RG= 4 Ω IF=
200 A
VCC = 600 V
Tj = 125 °C
VGE = ± 15 V
150 A
110 A
15 75 A
10 40 A
5
Qrr
0
0
diF/dt
2000
4000
6000
8000
A/µs
Fig. 24 Typ. CAL diode recovered charge
© by SEMIKRON
0898
B 6 – 161
5 Page | ||
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| PDF Descargar | [ Datasheet SKM200GB124.PDF ] | |
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