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PDF SK12 Data sheet ( Hoja de datos )
| Número de pieza | SK12 | |
| Descripción | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
| Fabricantes | Shanghai Sunrise Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SK12 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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SHANGHAI SUNRISE ELECTRONICS CO., LTD.
SK12 THRU SK16
SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIER
TECHNICAL
SPECIFICATION
VOLTAGE: 20 TO 60V CURRENT: 1.0A
FEATURES
• Ideal for surface mount pick and
place application
• Low profile package
• Low power loss, high efficiency
• High current capability,low VF
• High surge capability
• Open junction chip,silastic passivated
• High temperature soldering guaranteed:
260oC/10sec/at terminal
MECHANICAL DATA
• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
DSMA/DO-214AC
B
AC
I
D
F
GH
AB C D
MAX. .110(2.79) .177(4.50) .075(1.90) .012(0.305)
MIN. .100(2.54) .157(3.99) .052(1.32) .006(0.152)
EF GHI
MAX. .208(5.28) .090(2.29) .008(0.203) .060(1.52) .035(0.88)
MIN. .194(4.93) .078(1.98) .004(0.102) .030(0.76) .027(0.68)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
SYMBOL SK12 SK13 SK14 SK15 SK16 UNITS
Maximum Repetitive Peak Reverse Voltage
VRRM 20 30 40 50 60
V
Maximum RMS Voltage
VRMS
14 21 28 35 42
V
Maximum DC Blocking Voltage
VDC 20 30 40 50 60 V
Maximum Average Forward Rectified Current
(TL=110oC)
IF(AV) 1.0 A
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
IFSM
30
A
Maximum Instantaneous Forward Voltage
(at rated forward current)
VF
0.5
0.7 V
Maximum DC Reverse Current
(at rated DC blocking voltage)
Ta=25oC
Ta=100oC
IR
0.5 mA
10.0 mA
Typical Junction Capacitance
(Note 1) CJ
110 pF
Typical Thermal Resistance
(Note 2) Rθ(ja)
20 oC/W
Storage and Operation Junction Temperature TSTG,TJ
-65 to +150
oC
Note:
1.Measured at 1.0 MHz and applied voltage of 4.0Vdc
2.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area
http://www.sse-diode.com
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet SK12.PDF ] | |
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