(PDF) SI9803DY Datasheet - P-Channel Reduced Qg Fast Switching MOSFET

Número de pieza	SI9803DY
Descripción	P-Channel Reduced Qg Fast Switching MOSFET
Fabricantes	Vishay Siliconix
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No Preview Available ! Si9803DY Vishay Siliconix P-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.040 @ VGS = –4.5 V –25 0.060 @ VGS = –3.0 V S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D ID (A) "5.9 "4.8 SSS G DDDD P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg –25 "12 "5.9 "4.7 "40 –2.1 2.5 1.6 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Maximum Junction-to-Ambienta Parameter Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70638 S-49559—Rev. C, 11-Feb-98 Symbol RthJA Limit 50 Unit _C/W www.vishay.com S FaxBack 408-970-5600 1 1 page

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PDF SI9803DY Data sheet ( Hoja de datos )