(PDF) SI9802DY Datasheet - Dual N-Channel Reduced Qg/ Fast Switching MOSFET

Número de pieza	SI9802DY
Descripción	Dual N-Channel Reduced Qg/ Fast Switching MOSFET
Fabricantes	Vishay Siliconix
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No Preview Available ! Si9802DY Vishay Siliconix Dual N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.055 @ VGS = 4.5 V 20 0.075 @ VGS = 3.0 V ID (A) "4.5 "3.8 S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 D1 D1 D2 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 20 "12 "4.5 "3.6 "25 "1.7 2 1.3 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Maximum Junction-to-Ambienta Parameter Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70625 S-51303—Rev. A, 19-Dec-96 Symbol RthJA Limit 62.5 Unit _C/W www.vishay.com S FaxBack 408-970-5600 1 1 page

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PDF SI9802DY Data sheet ( Hoja de datos )