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PDF SI9529DY Data sheet ( Hoja de datos )
| Número de pieza | SI9529DY | |
| Descripción | Dual N- and P-Channel 2.5-V (G-S) Rated MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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Si9529DY
Dual N- and P-Channel 2.5-V (G-S) Rated MOSFET
Product Summary
VDS (V)
N-Channel
20
P-Channel –12
rDS(on) (W)
0.03 @ VGS = 4.5 V
0.04 @ VGS = 2.5 V
0.05 @ VGS = –4.5 V
0.074 @ VGS = –2.5 V
ID (A)
"6
"5.2
"5
"4.1
D1 D1
S2
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
G2
G1
S1
N-Channel MOSFET
D2 D2
P-Channel MOSFET
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol N-Channel P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20 –12
"8 "8
"6 "5
"4.8
"4.0
"20
"20
1.7 –1.7
2.0
1.3
–55 to 150
Unit
V
A
W
_C
Thermal Resistance Ratings
Parameter
Symbol
N- or P- Channel
Unit
Maximum Junction-to-Ambienta
RthJA
62.5 _C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70161.
Siliconix
S-49520—Rev. D, 18-Dec-96
1
1 page  
Si9529DY
Typical Characteristics (25_C Unless Otherwise Noted) P-Channel
Output Characteristics
20
VGS = 5, 4.5, 4, 3.5, 3 V
2.5 V
16
12
8 2V
4
0
0
0.10
1 V 1.5 V
1234
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
Transfer Characteristics
20
15
10
5
0
0
3000
TC = 125_C
25_C
–55_C
0.5 1.0 1.5 2.0 2.5
VGS – Gate-to-Source Voltage (V)
Capacitance
3.0
0.08
0.06 VGS = 2.5 V
0.04
0.02
VGS = 4.5 V
2500
2000
1500
1000
500
Ciss
Coss
Crss
0
0 5 10 15 20
ID – Drain Current (A)
Gate Charge
5
0
0 2 4 6 8 10 12
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
4
VDS = 6 V
ID = 5 A
3
2
1
1.6 VGS = 4.5 V
ID = 5 A
1.4
1.2
1.0
0.8
0
0 5 10 15 20
Qg – Total Gate Charge (nC)
Siliconix
S-49520—Rev. D, 18-Dec-96
25
0.6
–50
0 50 100
TJ – Junction Temperature (_C)
150
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SI9529DY.PDF ] | |
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