(PDF) SMBT6429 Datasheet - NPN Silicon Transistors

Número de pieza	SMBT6429
Descripción	NPN Silicon Transistors
Fabricantes	Siemens Semiconductor Group
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No Preview Available ! NPN Silicon Transistors q For AF input stages and driver applications q High current gain q Low collector-emitter saturation voltage SMBT 6428 SMBT 6429 Type SMBT 6428 SMBT 6429 Marking s1K s1L Ordering Code (tape and reel) Q68000-A8321 Q68000-A8322 Pin Configuration 123 BEC Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Symbol Values SMBT 6428 SMBT 6429 VCE0 50 45 VCB0 60 55 VEB0 6 IC 200 Ptot 330 Tj 150 Tstg – 65 … + 150 Unit V mA mW ˚C Rth JA Rth JS ≤ 310 ≤ 240 K/W 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 1 page Base-emitter saturation voltage IC = f (VBEsat), hFE = 40 SMBT 6428 SMBT 6429 Collector-emitter saturation voltage IC = f (VCEsat), hFE = 40 Collector current IC = f (VBE) VCE = 1 V DC current gain hFE = f (IC) VCE = 1 V Semiconductor Group 5 5 Page

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PDF SMBT6429 Data sheet ( Hoja de datos )