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PDF SMBT3906S Data sheet ( Hoja de datos )
| Número de pieza | SMBT3906S | |
| Descripción | PNP Silicon Switching Transistor Array | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SMBT3906S (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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SMBT3906S
PNP Silicon Switching Transistor Array
High DC current gain: 0.1mA to 100mA
Low collector-emitter saturation voltage
Two ( galvanic) internal isolated Transistors
with good matching in one package
Complementary type: SMBT3904S (NPN)
C1 B2 E2
654
4
5
6
3
2
1
VPS05604
TR2
TR1
Type
SMBT3906S
Marking
s2A
123
E1 B1 C2
EHA07175
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Total power dissipation, TS = 115 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
IC
Ptot
Tj
Tstg
Value
40
40
5
200
250
150
-65 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
140
K/W
1 Nov-30-2001
1 page  
Total power dissipation Ptot = f (TS)
SMBT3906S
300
mW
200
150
100
50
00 20 40 60 80 100 120 °C 150
TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 3
K/W
10 2
10 1
0.5
0.2
0.1
0.05
10 0
0.02
0.01
0.005
D=0
10
-1
10
-6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
10 3
-
D=0
10 2 0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10
0
10
-6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
5 Nov-30-2001
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SMBT3906S.PDF ] | |
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