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SMBT3906のメーカーはInfineon Technologies AGです、この部品の機能は「PNP Silicon Switching Transistor」です。 |
部品番号 | SMBT3906 |
| |
部品説明 | PNP Silicon Switching Transistor | ||
メーカ | Infineon Technologies AG | ||
ロゴ | |||
このページの下部にプレビューとSMBT3906ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
SMBT3906/ MMBT3906
PNP Silicon Switching Transistor
3
• High DC current gain: 0.1 mA to 100 mA
• Low collector-emitter saturation voltage
• Complementary type:
SMBT3904/ MMBT3904 (NPN)
2
1 VPS05161
Type
Marking
SMBT3906/ MMBT3906 s2A
Pin Configuration
1=B
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
TS = 71 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
IC
Ptot
Tj
Tstg
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
40
40
5
200
330
150
-65 ... 150
Value
≤240
Unit
V
mA
mW
°C
Unit
K/W
1 Jul-28-2003
1 Page AC Characteristics
Transition frequency
IC = 10 mA, VCE = 20 V, f = 100 MHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance
IC = 1 mA, VCE = 10 V, f = 1 kHz
Open-circuit reverse voltage transf. ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
Short-circuit forward current transf. ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
Open-circuit output admittance
IC = 1 mA, VCE = 10 V, f = 1 kHz
Delay time
VCC = 3 V, IC = 10 mA, IB1 = 1 mA,
VBE(off) = 0.5 V
Rise time
VCC = 3 V, IC = 10 mA, IB1 = 1 mA,
VBE(off) = 0.5 V
Storage time
VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1mA
Fall time
VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1mA
Noise figure
IC = 100 µA, VCE = 5 V, f = 1 kHz,
∆ f = 200 Hz, RS = 1 kΩ
SMBT3906/ MMBT3906
fT
Ccb
Ceb
h11e
h12e
h21e
h22e
td
250 -
- MHz
- - 4.5 pF
- - 10
2 - 12 kΩ
0.1 - 10 10-4
100 - 400 -
3 - 60 µS
- - 35 ns
tr - - 35
tstg - - 225
tf - - 75
F - - 4 dB
3 Jul-28-2003
3Pages SMBT3906/ MMBT3906
Short-circuit forward current
transfer ratio h21e = ƒ(IC)
VCE = 10V, f = 1MHz
10 3
5
h 21e
EHP00770
Open-circuit reverse voltage
transfer ratio h12e = ƒ(IC)
VCE = 10V, f = 1kHz
10 -3
h 12e
5
EHP00769
10 2 10 -4
55
10 1
10 -1
5 10 0
mA 5
ΙC
10 1
Open-circuit output admittance
h22e = ƒ(IC)
VCE = 10V, f = 1MHz
10 2
EHP00771
µs
5
h 22e
10 -5
10 -1
5 10 0
Input impedance
h11e = ƒ(IC)
VCE = 10 V, f = 1kHz
10 2
h 11e
kΩ
10 1
5
10 1
5 100
5
mA 10 1
ΙC
EHP00768
10 0
10 -1
5 10 0
mA 5
ΙC
10 1
10 -1
10 -1
6
5 100
mA 101
ΙC
Jul-28-2003
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ SMBT3906 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
SMBT3904 | NPN Silicon Switching Transistor | Siemens Semiconductor Group |
SMBT3904 | NPN Silicon Switching Transistor | Infineon Technologies AG |
SMBT3904PN | NPN/PNP Silicon Switching Transistor Array | Infineon Technologies AG |
SMBT3904S | NPN Silicon Switching Transistor Array | Siemens Semiconductor Group |