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PDF SMBT3904PN Data sheet ( Hoja de datos )
| Número de pieza | SMBT3904PN | |
| Descripción | NPN/PNP Silicon Switching Transistor Array | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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SMBT3904PN
NPN/PNP Silicon Switching Transistor Array
High current gain
Low collector-emitter saturation voltage
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Tape loading orientation
Top View
654
W1s
123
Direction of Unreeling
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
EHA07193
4
5
6
3
2
1
VPS05604
C1 B2 E2
654
TR2
TR1
123
E1 B1 C2
EHA07177
Type
SMBT3904PN
Marking
s3P
Pin Configuration
Package
1 = E 2 = B 3 = C 4 = E 5 = B 6 = C SOT363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Total power dissipation, TS = 115 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
IC
Ptot
Tj
Tstg
Value
40
40
5
200
250
150
-65 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Thermal resistance, chip case1)
RthJC
140
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1 Aug-21-2002
1 page  
SMBT3904PN
DC current gain hFE = f (IC)
VCE = 10V, normalized
10 1
h FE 5
125 C
10 0 25 C
-55 C
5
Saturation voltage IC = f (VBEsat, VCEsat)
hFE = 10
EHP00765
2
mA
Ι C 10 2
5
V CE
EHP00756
V BE
10 1
5
10 -1
10 -1
5 10 0
5 10 1
mA 10 2 2
ΙC
10 0
0
0.2 0.4 0.6 0.8 1.0 V 1.2
VBE sat , VCE sat
Short-circuit forward current
transfer ratio h21e = f(IC)
VCE = 10V, f = 1MHz
10 3
h 21e 5
EHP00759
Open-circuit reverse voltage
transfer ratio h12e = f (IC)
VCE = 10V, f = 1kHz
10 -3
h 12e
EHP00758
10 2 10 -4
55
10 1
10 -1
5 10 0
mA 10 1
ΙC
10 -5
10 -1
5
5 10 0
mA 10 1
ΙC
Aug-21-2002
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SMBT3904PN.PDF ] | |
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