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S350P の電気的特性と機能

S350PのメーカーはVishay Telefunkenです、この部品の機能は「Silicon NPN Phototransistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 S350P
部品説明 Silicon NPN Phototransistor
メーカ Vishay Telefunken
ロゴ Vishay Telefunken ロゴ 




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S350P Datasheet, S350P PDF,ピン配置, 機能
Silicon NPN Phototransistor
Description
S350P is a high sensitive silicon NPN epitaxial planar
phototransistor in a miniature plastic case with flat win-
dow.
With a lead center–to–center spacing of 2.54mm and
a package width of 2.4mm the devices are easily
stackable on PC boards and assembled to arrays of
unlimited size.
The epoxy package itself is an IR filter, spectrally
matched to GaAs IR emitters with lp > 850nm.
Features
D High radiant sensitivity
D Miniature T–¾ flat plastic package with IR filter
D Very wide angle of half sensitivity ϕ = ± 40°
D Suitable for near infrared radiation
D Suitable for 0.1” (2.54 mm) center–to–center
spacing
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
xtp/T = 0.5, tp 10 ms
xTamb 55 °C
xt 3 s
S350P
Vishay Telefunken
94 8640
Symbol
VCEO
VECO
IC
ICM
Ptot
Tj
Tstg
Tsd
RthJA
Value
32
5
50
100
100
100
–55...+100
260
450
Unit
V
V
mA
mA
mW
°C
°C
°C
K/W
Document Number 81543
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
1 (5)

1 Page





S350P pdf, ピン配列
2.0
1.8
VCE=5V
1.6 Ee=1mW/cm2
l=950nm
1.4
1.2
1.0
0.8
0.6
0
94 8239
20 40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 3. Relative Collector Current vs.
Ambient Temperature
10
1
0.1
VCE=5V
0.01 l=950nm
0.001
0.01
94 8255
0.1 1
Ee – Irradiance ( mW / cm2 )
10
Figure 4. Collector Light Current vs. Irradiance
10
l=950nm
1
Ee=1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
0.1 0.1 mW/cm2
0.01
0.1
1
10 100
94 8256
VCE – Collector Emitter Voltage ( V )
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
S350P
Vishay Telefunken
20
f=1MHz
16
12
8
4
0
0.1 1
10 100
94 8247
VCE – Collector Emitter Voltage ( V )
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
12
10 VCE=5V
WRL=100
l=950nm
8
6
ton
4
2 toff
0
04
8 12 16
94 8253
IC – Collector Current ( mA )
Figure 7. Turn On/Turn Off Time vs. Collector Current
1.0
0.8
0.6
0.4
0.2
0
700
94 8261
800 900 1000
l – Wavelength ( nm )
1100
Figure 8. Relative Spectral Sensitivity vs. Wavelength
Document Number 81543
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
3 (5)


3Pages





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S350P

Silicon NPN Phototransistor

Vishay Telefunken
Vishay Telefunken


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