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J112のメーカーはMotorola Incです、この部品の機能は「JFET Chopper Transistor (N-Channel- Depletion)」です。 |
部品番号 | J112 |
| |
部品説明 | JFET Chopper Transistor (N-Channel- Depletion) | ||
メーカ | Motorola Inc | ||
ロゴ | |||
このページの下部にプレビューとJ112ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFET Chopper Transistor
N–Channel — Depletion
3
GATE
1 DRAIN
2 SOURCE
Order this document
by J112/D
J112
MAXIMUM RATINGS
Rating
Symbol
Value
Drain – Gate Voltage
Gate – Source Voltage
Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VDG
VGS
IG
PD
– 35
– 35
50
350
2.8
Lead Temperature
Operating and Storage Junction
Temperature Range
TL
TJ, Tstg
300
– 65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage
(IG = –1.0 µAdc)
Gate Reverse Current
(VGS = –15 Vdc)
Gate Source Cutoff Voltage
(VDS = 5.0 Vdc, ID = 1.0 µAdc)
Drain–Cutoff Current
(VDS = 5.0 Vdc, VGS = –10 Vdc)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
(VDS = 15 Vdc)
Static Drain–Source On Resistance
(VDS = 0.1 Vdc)
Drain Gate and Source Gate On–Capacitance
(VDS = VGS = 0, f = 1.0 MHz)
Drain Gate Off–Capacitance
(VGS = –10 Vdc, f = 1.0 MHz)
Source Gate Off–Capacitance
(VGS = –10 Vdc, f = 1.0 MHz)
1. Pulse Width = 300 µs, Duty Cycle = 3.0%.
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
Symbol
V(BR)GSS
IGSS
VGS(off)
ID(off)
IDSS
rDS(on)
Cdg(on)
+
Csg(on)
Cdg(off)
Csg(off)
1
23
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
Min
35
—
– 1.0
—
Max
—
– 1.0
– 5.0
1.0
Unit
Vdc
nAdc
Vdc
nAdc
5.0 — mAdc
— 50
Ω
— 28
pF
— 5.0
— 5.0
pF
pF
(Replaces J111/D)
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1
1 Page 20
10
7.0
5.0 Tchannel = 25°C
VDS = 15 V
3.0
2.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
ID, DRAIN CURRENT (mA)
20 30 50
Figure 6. Typical Forward Transfer Admittance
J112
15
10
Cgs
7.0
5.0 Cgd
3.0 Tchannel = 25°C
2.0 (Cds IS NEGLIGIBLE)
1.5
1.0
0.03 0.05 0.1
0.3 0.5 1.0
3.0 5.0
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 7. Typical Capacitance
30
200
IDSS 25 50 mA 75 mA 100 mA
= 10 mA
160 mA
125 mA
120
80
40 Tchannel = 25°C
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 8. Effect of Gate–Source Voltage
On Drain–Source Resistance
2.0
1.8
ID = 1.0 mA
VGS = 0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
– 70
– 40 – 10 20 50 80 110 140
Tchannel, CHANNEL TEMPERATURE (°C)
Figure 9. Effect of Temperature On
Drain–Source On–State Resistance
170
100 Tchannel = 25°C
90
10
9.0
80 8.0
70 rDS(on) @ VGS = 0
60
50
VGS(off)
7.0
6.0
5.0
40 4.0
30 3.0
20 2.0
10 1.0
00
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
IDSS, ZERO–GATE–VOLTAGE DRAIN CURRENT (mA)
Figure 10. Effect of IDSS On Drain–Source
Resistance and Gate–Source Voltage
NOTE 2
The Zero–Gate–Voltage Drain Current (IDSS), is the principle
determinant of other J-FET characteristics. Figure 10 shows
the relationship of Gate–Source Off Voltage (VGS(off) and
Drain–Source On Resistance (rds(on)) to IDSS. Most of the
devices will be within ±10% of the values shown in Figure 10.
This data will be useful in predicting the characteristic
variations for a given part number.
For example:
Unknown
rds(on) and VGS range for an J112
The electrical characteristics table indicates that an J112
has an IDSS range of 25 to 75 mA. Figure 10, shows rds(on) =
52 Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA.
The corresponding VGS values are 2.2 volts and 4.8 volts.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
3Pages | |||
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