(PDF) KSD1943 Datasheet - High Power Transistor

Número de pieza	KSD1943
Descripción	High Power Transistor
Fabricantes	Fairchild Semiconductor
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No Preview Available ! High Power Transistor KSD1943 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 80 60 8 3 40 150 - 55 ~ 150 Units V V V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO ICBO IEBO hFE VBE(sat) VCE(sat) Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage IC = 25mA, IB = 0 VCB = 80V, IE = 0 VEB = 8V, IC = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A IC = 2A, IB = 0.05A Min. 60 400 Max. 100 10 2000 1.5 1 Units V µA µA V V ©2000 Fairchild Semiconductor International Rev. A, February 2000 1 page

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PDF KSD1943 Data sheet ( Hoja de datos )